Datasheet > EC747N60AR

EC747N60AR

更新时间： 2024-02-12 20:21:16

品牌	Logo	应用领域
飞虹 - E-CMOS		/
页数	文件大小	规格书
5页	412K
描述
600V,7A N-Channel Power MOSFET

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EC747N60AR 数据手册

EC747N60

600V,7A N-Channel Power MOSFET

Features

◆ 650V, 7A, R_DS(ON)(Max.) = 1.1Ω @ VGS = 10V

◆ Low Crss

◆ Fast Switching

◆ 100 % Avalanche Tested

Applications

Adapter

LCD Panel Power

Switching Mode Power Supply

E-Bike Charger

Absolute Maximum Ratings (Tc = 25°C unless otherwise noted)

Limit

TO-220

TO-263

600

Symbol

Parameter

Unit

TO-220F

VDS

VGS

Drain-Source Voltage ^a

Gate-Source Voltage

 30

Drain Current-Continuous, TC =25 ℃

Drain Current-Continuous, TC =100 ℃

Drain Current-Pulsed ^b

4.2

IDM

Maximum Power Dissipation @ TJ =25 ℃

Single Pulsed Avalanche Energy ^e

Peak Diode Recovery dv/dt ^c

125

V/ns

℃

EAS

196

4.6

dv/dt

TJ, TSTG

Operating and Store Temperature Range

-55 to 150

Thermal Characteristics

Symbol

Parameter

Value

Unit

Thermal Resistance, Junction-Case Max.

Thermal Resistance, Junction-Ambient Max.

3.1

℃/W



E-CMOS Corp. (www.ecmos.com.tw)

Page 1 of 5

4J09N-Rev.F001

12 3 4 5

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