Datasheet > EC742N65E

EC742N65E

更新时间： 2024-02-28 21:36:17

品牌	Logo	应用领域
飞虹 - E-CMOS		/
页数	文件大小	规格书
4页	166K
描述
650V 1.5A N-Channel Power MOSFET

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EC742N65E 数据手册

EC742N65E

650V 1.5A N-Channel Power MOSFET

Features

ꢀ 650V, 1.5A, RDS(ON)(Max.) = 8.2ꢀ@VGS = 10V.

ꢀ Low Intrinsic Capacitances.

ꢀ 100% Avalanche Rated.

ꢀ Rugged and reliable.

Applications

ꢀ Charger

ꢀ Standby Power.

Absolute Maximum Ratings Tc = 25°C unless otherwise noted

Limit

Unit

Symbol

Parameter

Drain-Source Voltage ^a

SOT223 TO-251

TO-252

VDS

650

±30

Gate-Source Voltage

Drain Current-Continuous, TC =25°C

Drain Current-Continuous, TC =100°C

Drain Current-Pulsed ^b

1.5

0.84

5.6

Maximum Power Dissipation @ T

Single Pulsed Avalanche Energy

=25°C

°C

EAS

10.62

-55 to 150

, TSTG

Operating and Store Temperature Range

Thermal Characteristics

Symbol

Parameter

ThermalResistance,Junction-CaseMax.

Value

3.2

Unit

°C/W

θJC

Electrical Characteristics( T_J= 25°C unless otherwise noted)

▊ Off Characteristics

Symbol

Parameter

Drain-Source Breakdown

Voltage

Test Condition

GS = 0V, I = 250ꢁA

DS = 650V, VGS = 0V

Min.

650

Typ.

Max.

Unit

BVDSS

Zero Gate Voltage Drain

Current

IDSS

ꢁA

Forward Gate Body

LeakageCurrent

Reverse Gate Body

Leakage Current

IGSSF

VDS = 0V, VGS = 30V

100

-100

IGSSR

VDS = 0V, VGS = -30V

E-CMOS Corp. (www.ecmos.com.tw)

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5A13N-Rev.F001

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