Datasheet > EC733626

EC733626

更新时间： 2024-01-26 12:32:42

品牌	Logo	应用领域
飞虹 - E-CMOS		/
页数	文件大小	规格书
4页	323K
描述
30V,6.9A,N-Channel MOSFET

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EC733626 数据手册

EC733626

30V,6.9A,N-Channel MOSFET

Description

The EC733626 uses advanced trench

technology to provide excellent RDS(ON)

and low gate charge .This device is

suitable for use as a load switch or in

PWM applications.

Features and Benefits:

SSF3626

◆ VDS = 30V,ID =6.9A

RDS(ON) < 51mΩ @ VGS=4.5V

RDS(ON) < 35mΩ @ VGS=10V

◆ High Power and current handing capability

◆ Lead free product is acquired

◆ Surface Mount Package

Application

◆ PWM applications

◆ Load switch

◆ Power management

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

6.9

5.5

VGS

ID(25℃)

ID(70℃)

IDM

Drain Current-Continuous@ Current-Pulsed (Note 1)

Maximum Power Dissipation

2.8

℃

Operating Junction and Storage Temperature Range

-55 To 150

TJ,TSTG

Thermal Resistance

E-CMOS Corp. (www.ecmos.com.tw)

Page 1 of 4

4J01N-Rev.F002

12 3 4

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