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EC733617M1R PDF预览

EC733617M1R

更新时间: 2024-01-04 21:30:42
品牌 Logo 应用领域
飞虹 - E-CMOS /
页数 文件大小 规格书
4页 194K
描述
-30V, -10A P-Channel MOSFET

EC733617M1R 数据手册

 浏览型号EC733617M1R的Datasheet PDF文件第2页浏览型号EC733617M1R的Datasheet PDF文件第3页浏览型号EC733617M1R的Datasheet PDF文件第4页 
EC733617  
-30V-10A P-Channel MOSFET  
Description  
The EC733617 uses advanced trench  
technology to provide excellent RDS(ON)  
and low gate charge .This device is  
suitable for use as a load switch or in  
PWM applications.  
Features and Benefits:  
VDS = -30V,ID =-10A  
R
DS(ON) < 35m@ VGS=-4.5V  
DS(ON) < 18m@ VGS=-10V  
R
High Power and current handing capability  
Lead free product is acquired  
Surface Mount Package  
Application  
PWM applications  
Load switch  
Power management  
Absolute Maximum Ratings (TA=25unless otherwise noted)  
Parameter  
Symbol  
Limit  
-30  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
GS  
V
±25  
V
I
D
(25)  
(70)  
-10  
A
ID  
Drain Current-Continuous@ Current-Pulsed (Note 1)  
-8  
A
IDM  
-80  
A
Maximum Power Dissipation  
P
D
3.1  
W
Operating Junction and Storage Temperature Range  
TJ  
,TSTG  
-55 To 150  
Thermal Resistance  
/W  
Thermal Resistance, Junction-Ambient (Note 2)  
R
θJA  
75  
E-CMOS Corp. (www.ecmos.com.tw)  
Page 1 of 4  
4L15N-Rev.F001  

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