Datasheet > EC733341LB1R

EC733341LB1R

更新时间： 2022-02-26 12:45:11

品牌	Logo	应用领域
飞虹 - E-CMOS		/
页数	文件大小	规格书
6页	306K
描述
-30V, -4.2A P-Channel MOSFET

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EC733341LB1R 数据手册

EC733341L

-30V、-4.2A P-Channel MOSFET

Description

The EC733341L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation

with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.

Features and Benefits:

◆ VDS = -30V,ID = -4.2A

RDS(ON) < 120mꢀ @ VGS=-2.5V

RDS(ON) < 65mꢀ @ VGS=-4.5V

RDS(ON) < 50mꢀ @ VGS=-10V

◆ High Power and current handing capability

◆ Lead free product is acquired

◆ Surface Mount Package

Application

◆ PWM applications

◆ Load switch

◆ Power management

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

Limit

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

VGS

±12

(25℃)

(70℃)

-4.2

Drain Current-Continuous@ Current-Pulsed (Note 1)

-3.5

IDM

-30

Maximum Power Dissipation

℃

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

Thermal Resistance

℃/W

Thermal Resistance,Junction-to-Ambient (Note 2)

RθJA

E-CMOS Corp. (www.ecmos.com.tw)

Page 1 of 6

4L04N-Rev.F001

12 3 4 5 6

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