Datasheet > EC733611EM1R

EC733611EM1R

更新时间： 2024-01-19 13:21:22

品牌	Logo	应用领域
飞虹 - E-CMOS		/
页数	文件大小	规格书
5页	163K
描述
-30V, -12A P-Channel MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

EC733611EM1R 数据手册

EC733611E

-30V、-12A P-Channel MOSFET

Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high

repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in

power switching application and a wide variety of other applications

Features

◆ Advanced MOSFET process technology

◆ Special designed for PWM, load switching and general purpose applications

◆ Ultra low on-resistance with low gate charge

◆ Fast switching and reverse body recovery

◆ 150℃ operating temperature

Main Product Characteristics

-30V

10.6mꢀ (typ.)

-12A

DSS

RDS(on)

Absolute Maximum Ratings

Symbol

Parameter

Max.

-12

-7.4

-48

Units

Continuous Drain Current, VGS @ 10V

@ TC = 25°C

@ TC = 100°C

①

Pulsed Drain Current

②

Power Dissipation

@TC = 25°C

③

Drain-Source Voltage

Gate-to-Source Voltage

-30

± 20

Operating Junction and Storage Temperature

Range

℃

STG

-55 to +150

Thermal Resistance

Symbol

Characterizes

Typ.

Max.

Units

ꢀ/W

θJA

Junction-to-ambient (t ≤ 10s) ④

—

62.5

E-CMOS Corp. (www.ecmos.com.tw)

Page 1 of 5

4L25N-Rev.F002

12 3 4 5

中文翻译

下载PDF

与EC733611EM1R相关器件

型号	品牌	获取价格	描述	数据表
EC733612	E-CMOS	获取价格	30V, 11.6A N-Channel MOSFET
EC733612M1R	E-CMOS	获取价格	30V, 11.6A N-Channel MOSFET
EC733615	E-CMOS	获取价格	-30V, -10A P-Channel MOSFET
EC733615M1R	E-CMOS	获取价格	-30V, -10A P-Channel MOSFET
EC733616	E-CMOS	获取价格	30V,9A,N-Channel MOSFET
EC733616M1R	E-CMOS	获取价格	30V,9A,N-Channel MOSFET
EC733617	E-CMOS	获取价格	-30V, -10A P-Channel MOSFET
EC733617M1R	E-CMOS	获取价格	-30V, -10A P-Channel MOSFET
EC733626	E-CMOS	获取价格	30V,6.9A,N-Channel MOSFET
EC733626M1R	E-CMOS	获取价格	30V,6.9A,N-Channel MOSFET