Datasheet > EC733339

EC733339

更新时间： 2022-02-26 12:45:10

品牌	Logo	应用领域
飞虹 - E-CMOS		/
页数	文件大小	规格书
6页	288K
描述
-30V, -4.1A P-Channel MOSFET

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EC733339 数据手册

EC733339

-30V、-4.1A P-Channel MOSFET

Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high

repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use

in power switching application and a wide variety of other applications.

Features and Benefits:

ꢀ Advanced MOSFET process technology

ꢀ Special designed for PWM, load switching and

general purpose applications

ꢀ Ultra low on-resistance with low gate charge

ꢀ Fast switching and reverse body recovery

ꢀ 150℃ operating temperature

Main Product Characteristics:

-30V

DSS

37mꢀ (typ.)

DS(on)

-4.1A

①

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Symbol

Parameter

Max.

Units

@ TC = 25°C

@ TC = 70°C

Continuous Drain Current, VGS @ 10V

-4.1

-3.5

①

Pulsed Drain Current

Power Dissipation

Drain-Source Voltage

②

-20

1.4

@TC = 25°C

③

-30

± 20

Gate-to-Source Voltage

TSTG

Operating Junction and Storage Temperature Range

-55 to +150

°C

Thermal Resistance

Symbol

Characterizes

Junction-to-ambient (t ≤ 10s)

Typ.

Max.

Units

④

—

°C /W

RθJA

E-CMOS Corp. (www.ecmos.com.tw)

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4K27N-Rev.F001

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