Datasheet > EC733338B1R

EC733338B1R

更新时间： 2022-02-26 12:45:10

品牌	Logo	应用领域
飞虹 - E-CMOS		/
页数	文件大小	规格书
4页	480K
描述
N-Channel MOSFET

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EC733338B1R 数据手册

EC733338

N-Channel MOSFET

Description

The EC733338 uses advanced trench technology to provide excellent R_DS(ON)and low gate charge .This device is

suitable for use as a load switch or in PWM applications.

Features

● V_DS= 30V,I_D=4A

R_DS(ON)< 65mΩ @ VGS=4.5V

R_DS(ON)< 47mΩ @ VGS=10V

● High Power and current handing capability

● Lead free product is acquired

● Surface Mount Package

Application

●PWM applications

●Load switch

●Power management

PACKAGE MARKING AND ORDERING INFORMATION

Device Marking

Device

Device Package

Quantity

3338

EC733338B1R

SOT23-3L

3000 units

ABSOLUTE MAXIMUM RATINGS(TA=25

℃unless otherwise noted)

Parameter

Drain-Source Voltage

Symbol

V_DS

Limit

Unit

Gate-Source Voltage

±20

V_GS

I_D

Drain Current-Continuous@ Current-Pulsed (Note 1)

I_DM

Maximum Power Dissipation

1.25

-55 To 150

℃

P_D

Operating Junction and Storage Temperature Range

T_J,T_STG

THERMAL CHARACTERISTICS

Parameter

Symbol

Limit

Unit

R_θJA

100

℃

Thermal Resistance,Junction-to-Ambient (Note 2)

E-CMOS Corp. (www.ecmos.com.tw)

Page 1 of 4

4H07N-Rev.F001

12 3 4

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