Datasheet > EC733322B1R

EC733322B1R

更新时间： 2022-02-26 12:45:05

品牌	Logo	应用领域
飞虹 - E-CMOS		/
页数	文件大小	规格书
4页	321K
描述
30V, 5.8A N-Channel MOSFET

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EC733322B1R 数据手册

EC733322

30V、5.8A N-Channel MOSFET

Description

The EC733322 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable

for use as a load switch or in PWM applications.

Features :

◆ VDS = 30V,ID =5.8A

RDS(ON) < 43mΩ @ VGS=4.5V

RDS(ON) < 28mΩ @ VGS=10V

◆ High Power and current handing capability

◆ Lead free product is acquired

◆ Surface Mount Package

Schematic diagram

Application

◆ PWM applications

◆ Load switch

◆ Power management

pin Assignment

Main Product Characteristics

30V

22mΩ(typ.)

5.8A

VDSS

RDS(on)

Absolute max Rating

Symbol

Parameter

Max.

Units

ID @ TC = 25°C

ID @ TC = 100°C

IDM

Continuous Drain Current, VGS @ 10V①

Pulsed Drain Current②

0.75

Power Dissipation③

0.36

800

± 30

W/°C

PD @TC = 25°C

Linear Derating Factor

Drain-Source Voltage

VDS

Gate-to-Source Voltage

VGS

Single Pulse Avalanche Energy @ L=100mH

Avalanche Current @ L=100mH

EAS

IAS

Operating Junction and Storage Temperature Range

-55 to + 150

°C

TJ TSTG

E-CMOS Corp. (www.ecmos.com.tw)

Page 1 of 4

4J01-Rev.F002

12 3 4

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