Datasheet > E35A23VDR

E35A23VDR

更新时间： 2024-09-08 23:49:43

品牌	Logo	应用领域
其他 - ETC		二极管测试电机
页数	文件大小	规格书
1页	62K
描述
Automotive＞Alternator Diode＞E35A23VDR

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中文翻译

获取价格

数据手册

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E35A23VDR 数据手册

SEMICONDUCTOR

E35A23VDS, E35A23VDR

STACK SILICON DIFFUSED DIODE

TECHNICAL DATA

ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.

FEATURES

ᴌAverage Forward Current : I_O=35A.

ᴌZener Voltage : 23V(Typ.)

POLARITY

E35A23VDS (+ Type)

E35A23VDR (- Type)

MAXIMUM RATING (Ta=25ᴱ)

DIM MILLIMETERS DIM MILLIMETERS

9.5 0.2

3.1 0.1

CHARACTERISTIC

SYMBOL

I_F(AV)

RATING

UNIT

8.4 0.2

Φ1.5

1.2

R0.5

Average Forward Current

0.4

POLARITY

MILLIMETERS

DIM TYPE

350

19.0+1.0

I_FSM

Peak 1 Cycle Surge Current

23.0 1.0

(10ms Condition)

V_RRM

T_j

Repetitive Peak Revese Voltage

Junction Temperature

-40ᴕ200

ᴱ

T_stg

Storage Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC SYMBOL

Peak Forward Voltage

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

V_FM

V_Z

I_FM=100A

1.15

I_R=10mA

V_R=17V

Reverse Voltage

I_RRM

Repetitive Peak Reverse Current

ỌA

Zener Voltage

I_Z=10mA

ề

0.077

%/ᴱ

Temperature Coefficient

Reverse Leakage Current Under

High Temperature

HI_R

R_th

Ta=150ᴱ, V_R=V_RM

2.5

Temperature Resistance

Junction to case

0.8

ᴱ/W

2000. 7. 11

Revision No : 0

1/1

中文翻译

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