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E35A2CDS

更新时间: 2024-11-22 22:30:15
品牌 Logo 应用领域
KEC 二极管电机LTE
页数 文件大小 规格书
1页 377K
描述
STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE)

E35A2CDS 技术参数

生命周期:Obsolete包装说明:O-XXSS-X1
针数:1Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.72Is Samacsys:N
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-XXSS-X1最大非重复峰值正向电流:350 A
元件数量:1相数:1
端子数量:1最高工作温度:200 °C
最低工作温度:-40 °C最大输出电流:35 A
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:SPECIAL SHAPE认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:15 µs
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UNSPECIFIEDBase Number Matches:1

E35A2CDS 数据手册

  
SEMICONDUCTOR  
E35A2CDS, E35A2CDR  
STACK SILICON DIFFUSED DIODE  
TECHNICAL DATA  
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.  
E
F
FEATURES  
Average Forward Current : IO=35A.  
Reverse Voltage : 200V(Min)  
POLARITY  
E35A2CDS E35A2CDR  
G
(+ Type)  
(- Type)  
B
A
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
DIM MILLIMETERS DIM MILLIMETERS  
_
+
3.1 0.1  
_
+
9.5 0.2  
A
B
C
D
E
F
_
+
8.4 0.2  
SYMBOL  
IF(AV)  
IFSM  
RATING  
35  
UNIT  
A
Φ1.5  
R0.5  
1.2  
1
G
_
+
Average Forward Current  
Peak 1 Cycle Surge Current  
Repetitive Peak Revese Voltage  
Junction Temperature  
L1  
5
0.4  
POLARITY  
MILLIMETERS  
DIM TYPE  
350 (60Hz)  
200  
A
_
19.0+1.0  
S
L2  
_
+
23.0 1.0  
R
VRRM  
Tj  
V
-40 200  
-40 200  
PD  
Tstg  
Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Forward Voltage  
SYMBOL  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
UNIT  
VF  
VR  
IR  
IFM=100A  
-
200  
-
-
-
-
-
1.05  
-
V
V
A
S
IR=5mA  
Reverse Voltage  
VR=200V  
Reverse Current  
50  
15  
trr  
IF=0.1A, IR=0.1A  
Reverse Recovery Time  
-
Reverse Leakage Current Under  
High Temperature  
HIR  
Rth  
Ta=150 , VR=200v  
-
-
-
2.5  
-
mA  
/W  
Temperature Resistance  
DC total Junction to case  
0.8  
2002. 10. 9  
Revision No : 1  
1/1  

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