Datasheet > E35A27VBCR

E35A27VBCR

更新时间： 2024-09-09 12:22:03

品牌	Logo	应用领域
CRYSTEKMICROWAVE		二极管电机 LTE
页数	文件大小	规格书
1页	348K
描述
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.

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中文翻译

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数据手册

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E35A27VBCR 数据手册

SEMICONDUCTOR

E35A27VBCS, E35A27VBCR

STACK SILICON DIFFUSED DIODE

TECHNICAL DATA

ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.

FEATURES

· Average Forward Current : I_O=35A.

· Zener Voltage : 27V(Typ.)

DIM MILLIMETERS

POLARITY

Φ9.55 MAX

Φ10.1+0.09-0.00

E35A27VBCS (+ Type)

E35A27VBCR (- Type)

Φ1.3 0.04

3.2+ 0.2

6.2+0.1

TYP 0.4

8.66 0.2

0.389 0.1x45

6.7 MAX

0.2+0.1

*Note

MAXIMUM RATING (Ta=25℃)

Φ6.10(+0, -0.03)

CHARACTERISTIC

Average Forward Current

Peak 1 Cycle Surge Current

SYMBOL

I_F(AV)

RATING

UNIT

I_FSM

300 (60Hz)

Non-Repetitive Peak

Reverse Surge Current

(10mS)

I_RSM

C-PF

Transient Peak Reverse

Voltage

V_RSM

*Note

V_RM

T_j

Peak Reverse Voltage

Junction Temperature

Storage Temperature Range

Item

Length(K)

20.35±0.5

28.35±0.5

-40∼ 215

℃

E35A27VBCS

E35A27VBCR

T_stg

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Forward Voltage

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

V_F

V_Z

I_FM=100A

1.10

0.2

I_Z=10mA

Zener Voltage

I_R

V_R=20V

Reverse Current

μA

I_FM=100A, I_M=100mA, Pw=100mS

I_rsm=42A, Pw=10mS

I_Z=10mA

Transient Thermal Resistance

Breakdown Voltage

Temperature Coefficient

ΔV_F

V_br

15.7

mV/℃

Reverse Leakage Current Under

High Temperature

HI_R

R_th

Ta=150℃, V_R=20V

100

0.8

μA

Temperature Resistance

DC total junction to case

℃/W

2012. 5. 23

Revision No : 0

1/1

中文翻译

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