Datasheet > DTD513ZE_09

DTD513ZE_09

更新时间： 2024-10-29 06:54:51

品牌	Logo	应用领域
罗姆 - ROHM		晶体电阻器数字晶体管
页数	文件大小	规格书
3页	179K
描述
500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)

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DTD513ZE_09 数据手册

500mA / 12V Low V_CE(sat) Digital transistors

(with built-in resistors)

DTD513ZE / DTD513ZM

zApplications

zDimensions (Unit : mm)

Inverter, Interface, Driver

DTD513ZE

0.7

1.6

0.55

0.3

( )

zFeature

1) V^CE(sat) is lower than conventional products.

2) Built-in bias resistors enable the configuration of

an inverter circuit without connecting external

input resistors (see equivalent circuit).

3) The bias resistors consist of thin-film resistors with

complete isolation to allow negative biasing of the input.

They also have the advantage of

(

)

( )

0.2

0.15

(1) GND

(2) IN

(3) OUT

0.5

1.0

EMT3

JEITA No. (SC-75A)

JEDEC No. <SOT-416>

Each lead has same dimensions

Abbreviated symbol : Y21

almost completely eliminating parasitic effects.

4) Only the on / off conditions need to be set for operation,

making the device design easy.

DTD513ZM

1.2

0.32

(3)

( )( )

1 2

0.22

(1) IN

(2) GND

(3) OUT

0.13

zStructure

NPN epitaxial plannar silicon transistor

(Resistor built-in type)

0.4 0.4

0.5

0.8

VMT3

Each lead has same dimensions

Abbreviated symbol : Y21

zPackaging specifications

Package

EMT3

Taping

VMT3

Taping

T2L

Packaging type

Code

Basic ordering

unit (pieces)

3000

8000

Part No.

DTD513ZE

DTD513ZM

−

zAbsolute maximum ratings (Ta=25°C)

zInner circuit

Limits

Parameter

Symbol

Unit

OUT

DTD513ZE DTD513ZM

Supply voltage

C (max)

−5 to +10

500

Input voltage

GND

OUT

∗1

∗2

Collector current

Power dissipation

Junction temperature

Storage temperature

150

Tstg

150

GND

−55 to +150

∗1 Characteristics of built-in transistor.

∗2 Each terminal mounted on a recommended land.

=1.0kΩ / R =10kΩ

www.rohm.com

2009.05 - Rev.B

1/2

12 3

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