DTD513ZM

更新时间： 2024-10-29 03:30:47

品牌	Logo	应用领域
罗姆 - ROHM		晶体电阻器数字晶体管
页数	文件大小	规格书
2页	58K
描述
500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)

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DTD513ZE / DTD513ZM

Transistors

500mA / 12V Low VCE (sat) Digital transistors

(with built-in resistors)

DTD513ZE / DTD513ZM

zApplications

zExternal dimensions (Unit : mm)

Inverter, Interface, Driver

DTD513ZE

0.7

1.6

0.3

0.55

zFeature

( )

1) V^CE(sat) is lower than conventional products.

2) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input

resistors (see equivalent circuit).

(

)

( )

0.2

0.15

(1) GND

(2) IN

(3) OUT

0.5 0.5

1.0

EMT3

JEITA No. (SC-75A)

JEDEC No. <SOT-416>

Each lead has same dimensions

3) The bias resistors consist of thin-film resistors with

complete isolation to allow negative biasing of the

input. They also have the advantage of almost

completely eliminating parasitic effects.

Abbreviated symbol : Y21

DTD513ZM

1.2

0.32

4) Only the on / off conditions need to be set for

operation, making the device design easy.

(3)

( )( )

1 2

0.22

(1) IN

(2) GND

(3) OUT

0.13

0.4 0.4

0.5

zStructure

NPN epitaxial plannar silicon transistor

(Resistor built-in type)

0.8

VMT3

Each lead has same dimensions

Abbreviated symbol : Y21

zAbsolute maximum ratings (Ta=25°C)

zPackaging specifications

Package

EMT3

VMT3

Taping

T2L

Limits

Parameter

Supply voltage

Symbol

Unit

Packaging type

Code

Taping

DTD513ZE DTD513ZM

C (max)

−5 to +10

500

Basic ordering

unit (pieces)

Input voltage

3000

8000

Part No.

∗1

∗2

Collector current

Power dissipation

Junction temperature

Storage temperature

DTD513ZE

DTD513ZM

−

150

−

Tstg

150

−55 to +150

∗1 Characteristics of built-in transistor.

∗2 Each terminal mounted on a recommended land.

zElectrical characteristics (Ta=25°C)

zEquivalent circuit

Parameter

Symbol Min.

Typ. Max. Unit

Conditions

V^I(off)

VI(on)

VO(on)

−

2.5

−

0.3

−

V^CC=5V, IO=100µA

V^O=0.3V, IO=20mA

I^O/II=100mA / 5mA

V^I= 5V

OUT

Input voltage

Output voltage

Input current

−

300

6.4

0.5

−

µA

−

GND

OUT

Output current

DC current gain

Transition frequency

Input resistance

Resistance ratio

IO(off)

−

V^CC=12V, VI=0V

V^O=2V, IO=100mA

140

−

∗

260

1.0

−

MHz V^CE=10V

IE= −5mA, f=100MHz

GND

0.7

8.0

1.3

kΩ

−

R2/R1

−

=1.0kΩ / R

=10kΩ

∗ Characteristics of built-in transistor.

1/1

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与DTD513ZM相关器件

型号	品牌	获取价格	描述	数据表
DTD523YE	ROHM	获取价格	500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)
DTD523YE_09	ROHM	获取价格	500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)
DTD523YE3	ROHM	获取价格	These are the standard products of "digital transistors" which ROHM invented and marketed
DTD523YE3 (新产品)	ROHM	获取价格	These are the standard products of "digital transistors" which ROHM invented and marketed
DTD523YM	ROHM	获取价格	500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)
DTD523YMT2L	ROHM	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO
DTD543EE	ROHM	获取价格	Low VCE (sat) Digital transistors (with built-in resistors)
DTD543EE_09	ROHM	获取价格	Low VCE (sat) Digital transistors with built-in resistors)
DTD543EE3	ROHM	获取价格	These are the standard products of "digital transistors" which ROHM invented and marketed
DTD543EE3 (新产品)	ROHM	获取价格	These are the standard products of "digital transistors" which ROHM invented and marketed

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