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DTD523YE

更新时间： 2024-10-29 03:30:47
品牌 Logo 应用领域
罗姆 - ROHM 晶体电阻器小信号双极晶体管数字晶体管光电二极管放大器
页数 文件大小 规格书
2页 58K
描述
500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)

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中文翻译

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DTD523YE 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SC-75A
包装说明：SMALL OUTLINE, R-PDSO-G3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.74Is Samacsys：N
其他特性：BUILT IN BIAS RESISTOR RATIO 4.5最大集电极电流 (IC)：0.5 A
集电极-发射极最大电压：12 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：140JESD-30 代码：R-PDSO-G3
JESD-609代码：e1元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：YES端子面层：Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：10晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：260 MHz
Base Number Matches：1

DTD523YE 数据手册

 浏览型号DTD523YE的Datasheet PDF文件第2页 
DTD523YE / DTD523YM  
Transistors  
500mA / 12V Low VCE (sat) Digital transistors  
(with built-in resistors)  
DTD523YE / DTD523YM  
zApplications  
zExternal dimensions (Unit : mm)  
Inverter, Interface, Driver  
DTD523YE  
0.7  
1.6  
0.3  
0.55  
zFeature  
( )  
3
1) VCE (sat) is lower than conventional products.  
2) Built-in bias resistors enable the configuration of an  
inverter circuit without connecting external input  
resistors (see equivalent circuit).  
(
)
( )  
1
2
0.2  
0.2  
0.15  
(1) GND  
(2) IN  
(3) OUT  
0.5 0.5  
1.0  
EMT3  
JEITA No. (SC-75A)  
JEDEC No. <SOT-416>  
Each lead has same dimensions  
3) The bias resistors consist of thin-film resistors with  
complete isolation to allow negative biasing of the  
input. They also have the advantage of almost  
completely eliminating parasitic effects.  
Abbreviated symbol : X62  
DTD523YM  
1.2  
4) Only the on / off conditions need to be set for  
operation, making the device design easy.  
0.32  
(3)  
( )( )  
1 2  
0.22  
(1) IN  
(2) GND  
(3) OUT  
0.13  
0.4 0.4  
0.5  
zStructure  
0.8  
NPN epitaxial plannar silicon transistor  
(Resistor built-in type)  
VMT3  
Each lead has same dimensions  
Abbreviated symbol : X62  
zAbsolute maximum ratings (Ta=25°C)  
zPackaging specifications  
Package  
EMT3  
Taping  
TL  
VMT3  
Taping  
T2L  
Limits  
Parameter  
Supply voltage  
Symbol  
Unit  
Packaging type  
Code  
DTD523YE DTD523YM  
V
CC  
IN  
C (max)  
V
V
12  
−5 to +12  
500  
Input voltage  
V
Basic ordering  
unit (pieces)  
3000  
8000  
∗1  
∗2  
Part No.  
Collector current  
Power dissipation  
Junction temperature  
Storage temperature  
I
mA  
mW  
C
DTD523YE  
DTD523YM  
−
P
D
150  
−
Tj  
Tstg  
150  
C
−55 to +150  
∗1 Characteristics of built-in transistor.  
∗2 Each terminal mounted on a recommended land.  
zElectrical characteristics (Ta=25°C)  
zEquivalent circuit  
Parameter  
Symbol Min.  
Typ. Max. Unit  
Conditions  
=100µA  
=20mA  
=100mA / 5mA  
= 5V  
CC=12V, V  
=2V, I =100mA  
CE=10V  
V
V
I(off)  
−
2.5  
−
−
−
0.3  
−
V
CC=5V, IO  
OUT  
R1  
Input voltage  
V
IN  
I(on)  
V
O
=0.3V, I  
O
R2  
Output voltage  
Input current  
V
O(on)  
60  
−
300  
3.0  
500  
−
mV  
mA  
nA  
−
I
O
/I  
I
I
I
−
V
V
V
V
I
GND  
OUT  
Output current  
DC current gain  
Transition frequency  
Input resistance  
Resistance ratio  
I
O(off)  
−
−
I=0V  
G
I
140  
−
−
O
O
IN  
∗
f
T
260  
2.2  
4.5  
−
MHz  
kΩ  
−
,
I
E
= −5mA, f=100MHz  
GND  
R1  
1.54  
3.6  
2.86  
5.5  
−
−
R
2/R1  
R1=2.2kΩ / R2=10kΩ  
∗ Characteristics of built-in transistor.  
1/1  
12

中文翻译

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 		500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)
DTD523YE3 ROHM

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DTD523YM ROHM

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DTD543EE_09 ROHM

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DTD543EE3 ROHM

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 		These are the standard products of "digital transistors" which ROHM invented and marketed
DTD543EE3 (新产品) ROHM

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 		These are the standard products of "digital transistors" which ROHM invented and marketed
DTD543EETL ROHM

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 		Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO

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