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DTD543EETL PDF预览

DTD543EETL

更新时间： 2024-10-29 19:54:55
品牌 Logo 应用领域
罗姆 - ROHM 放大器光电二极管晶体管
页数 文件大小 规格书
3页 150K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SC-75A, EMT3, 3 PIN

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中文翻译

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DTD543EETL 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SC-75A
包装说明：SMALL OUTLINE, R-PDSO-G3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：13 weeks风险等级：1.66
其他特性：BUILT IN BIAS RESISTOR RATIO 1最大集电极电流 (IC)：0.5 A
集电极-发射极最大电压：12 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：115JESD-30 代码：R-PDSO-G3
JESD-609代码：e1湿度敏感等级：1
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：NPN
最大功率耗散 (Abs)：0.15 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：TIN SILVER COPPER端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：10
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：260 MHzBase Number Matches：1

DTD543EETL 数据手册

 浏览型号DTD543EETL的Datasheet PDF文件第2页浏览型号DTD543EETL的Datasheet PDF文件第3页 
Low VCE (sat) Digital transistors  
(with built-in resistors)  
DTD543EE / DTD543EM  
zApplications  
zDimensions (Unit : mm)  
Inverter, Interface, Driver  
DTD543EE  
0.7  
1.6  
0.3  
0.55  
( )  
3
zStructure  
NPN digital transistor (Built-in resistor type)  
( )  
2
( )  
1
0.2  
0.2  
0.15  
(1) GND  
(2) IN  
(3) OUT  
0.5  
0.5  
1.0  
EMT3  
JEITA No. (SC-75A)  
JEDEC No. <SOT-416>  
zFeature  
Each lead has same dimensions  
1.VCE (sat) is lower than conventional products.  
2.Built-in bias resistors enable the configuration of  
an inverter circuit without connecting  
Addreviated symbol : X23  
external input resistors (see equivalent circuit).  
3.The bias resistors consist of thin-film resistors with  
complete isolation to allow negative biasing of the input.  
They also have the advantage of almost completely  
eliminating parasitic effects.  
DTD543EM  
1.2  
0.32  
(3)  
( )( )  
1 2  
0.22  
4.Only the on / off conditions need to be set for operation,  
making device design easy.  
(1) IN  
(2) GND  
(3) OUT  
0.13  
0.4 0.4  
0.5  
0.8  
VMT3  
Each lead has same dimensions  
Addreviated symbol : X23  
zPackaging specifications  
Package  
EMT3  
Taping  
TL  
VMT3  
Taping  
T2L  
Packaging type  
Code  
Basic ordering  
unit (pieces)  
3000  
8000  
Part No.  
DTD543EE  
DTD543EM  
−
−
zAbsolute maximum ratings (Ta=25°C)  
zInner circuit  
Limits  
Parameter  
Symbol  
Unit  
DTD543EE DTD543EM  
OUT  
R1  
IN  
Supply voltage  
V
CC  
V
V
12  
−10 to +12  
500  
R2  
Input voltage  
V
IN  
GND  
OUT  
∗1  
∗2  
Collector current  
Power dissipation  
Junction temperature  
Storage temperature  
I
C (max)  
PD  
mA  
mW  
C
150  
IN  
Tj  
150  
GND  
Tstg  
C
−55 to +150  
∗1 Characteristics of built-in transistor.  
∗2 Each terminal mounted on a recommended land.  
R1  
=4.7kΩ / R =4.7kΩ  
2
www.rohm.com  
2009.05 - Rev.B  
1/2  
c
○ 2009 ROHM Co., Ltd. All rights reserved.  
123

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与DTD543EETL相关器件

型号 品牌 获取价格 描述 数据表
DTD543EM ROHM

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 		Low VCE (sat) Digital transistors (with built-in resistors)
DTD543XE ROHM

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 		500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)
DTD543XE_1 ROHM

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 		500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)
DTD543XE3 ROHM

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 		These are the standard products of "digital transistors" which ROHM invented and marketed
DTD543XE3 (新产品) ROHM

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 		These are the standard products of "digital transistors" which ROHM invented and marketed
DTD543XM ROHM

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 		500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)
DTD543ZE ROHM

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 		500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)
DTD543ZE3 ROHM

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 		These are the standard products of "digital transistors" which ROHM invented and marketed
DTD543ZE3 (新产品) ROHM

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 		These are the standard products of "digital transistors" which ROHM invented and marketed
DTD543ZET2L ROHM

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 		Small Signal Bipolar Transistor

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