DTD543XM

更新时间： 2024-10-29 03:30:47

品牌	Logo	应用领域
罗姆 - ROHM		晶体电阻器数字晶体管
页数	文件大小	规格书
2页	54K
描述
500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)

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DTD543XM 数据手册

DTD543XE / DTD543XM

Transistors

500mA / 12V Low VCE (sat) Digital transistors

(with built-in resistors)

DTD543XE / DTD543XM

zApplications

zExternal dimensions (Unit : mm)

Inverter, Interface, Driver

DTD543XE

0.7

1.6

0.3

0.55

zFeature

( )

1) V^CE(sat) is lower than conventional products.

2) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input resistors

(see equivalent circuit).

(

)

( )

0.2

0.15

(1) GND

(2) IN

(3) OUT

0.5 0.5

1.0

EMT3

JEITA No. (SC-75A)

JEDEC No. <SOT-416>

3) The bias resistors consist of thin-film resistors with

complete isolation to allow negative biasing of the

input. They also have the advantage of almost completely

eliminating parasitic effects.

Each lead has same dimensions

Addreviated symbol : X43

DTD543XM

4) Only the on / off conditions need to be set for operation,

making the device design easy.

1.2

0.32

(3)

( )( )

1 2

0.22

zStructure

NPN epitaxial planar silicon transistor

(Resistor built-in type)

(1) IN

(2) GND

(3) OUT

0.13

0.4 0.4

0.5

0.8

VMT3

Each lead has same dimensions

Addreviated symbol : X43

zAbsolute maximum ratings (Ta=25°C)

zPackaging specifications

Package

EMT3

VMT3

Taping

T2L

Limits

Parameter

Symbol

Unit

Packaging type

Code

Taping

DTD543XE DTD543XM

Supply voltage

C (max)

−7 to +12

500

Basic ordering

unit (pieces)

Input voltage

3000

8000

Part No.

∗1

∗2

Collector current

Power dissipation

Junction temperature

Storage temperature

DTD543XE

DTD543XM

−

150

−

Tstg

150

−55 to +150

∗1 Characteristics of built-in transistor.

∗2 Each terminal mounted on a recommended land.

zElectrical characteristics (Ta=25°C)

zEquivalent circuit

Parameter

Symbol Min.

Typ. Max. Unit

Conditions

=100µA

=2mA

=100mA / 5mA

= 5V

CC=12V, V

=2V, I =100mA

CE=10V

I(off)

−

2.5

−

0.3

−

CC=5V, IO

OUT

Input voltage

I(on)

=0.3V, I

Output voltage

Input current

O(on)

−

300

1.4

500

−

µA

−

GND

OUT

−

Output current

DC current gain

Transition frequency

Input resistance

Resistance ratio

O(off)

−

I=0V

140

−

GND

∗

260

4.7

2.1

−

MHz

kΩ

−

=−5mA, f=100MHz

3.29

1.7

6.11

2.6

−

R2/R

R1=4.7kΩ / R2=10kΩ

∗ Characteristics of built-in transistor.

Rev.A

1/1

中文翻译

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与DTD543XM相关器件

型号	品牌	获取价格	描述	数据表
DTD543ZE	ROHM	获取价格	500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)
DTD543ZE3	ROHM	获取价格	These are the standard products of "digital transistors" which ROHM invented and marketed
DTD543ZE3 (新产品)	ROHM	获取价格	These are the standard products of "digital transistors" which ROHM invented and marketed
DTD543ZET2L	ROHM	获取价格	Small Signal Bipolar Transistor
DTD543ZM	ROHM	获取价格	500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)
DTD543ZMT2L	ROHM	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO
DTD543ZMTL	ROHM	获取价格	暂无描述
DTD713ZE	ROHM	获取价格	200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)
DTD713ZE_09	ROHM	获取价格	200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)
DTD713ZETL	ROHM	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO

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