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DTD543EM

更新时间： 2024-10-29 03:30:47
品牌 Logo 应用领域
罗姆 - ROHM 晶体数字晶体管
页数 文件大小 规格书
2页 59K
描述
Low VCE (sat) Digital transistors (with built-in resistors)

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DTD543EM 数据手册

 浏览型号DTD543EM的Datasheet PDF文件第2页 
DTD543EE / DTD543EM  
Transistors  
Low VCE (sat) Digital transistors  
(with built-in resistors)  
DTD543EE / DTD543EM  
zApplications  
zExternal dimensions (Unit : mm)  
Inverter, Interface, Driver  
DTD543EE  
0.7  
1.6  
0.3  
0.55  
zStructure  
( )  
3
NPN digital transistor (Built-in resistor type)  
( )  
2
( )  
1
0.2  
0.2  
zFeature  
0.15  
(1) GND  
(2) IN  
(3) OUT  
0.5 0.5  
1.0  
1) VCE (sat) is lower than conventional products.  
2) Built-in bias resistors enable the configuration of an  
inverter circuit without connecting external input  
resistors (see equivalent circuit).  
EMT3  
JEITA No. (SC-75A)  
JEDEC No. <SOT-416>  
Each lead has same dimensions  
Addreviated symbol : X23  
3) The bias resistors consist of thin-film resistors with  
complete isolation to allow negative biasing of the  
input. They also have the advantage of almost  
completely eliminating parasitic effects.  
4) Only the on / off conditions need to be set for  
operation, making device design easy.  
DTD543EM  
1.2  
0.32  
(3)  
( )( )  
1 2  
0.22  
(1) IN  
(2) GND  
(3) OUT  
0.13  
0.4 0.4  
0.5  
0.8  
VMT3  
Each lead has same dimensions  
Addreviated symbol : X23  
zAbsolute maximum ratings (Ta=25°C)  
zPackaging specifications  
Limits  
Package  
EMT3  
Taping  
TL  
VMT3  
Taping  
T2L  
Parameter  
Symbol  
Unit  
DTD543EE DTD543EM  
Packaging type  
Code  
Supply voltage  
VCC  
V
V
12  
−10 to +12  
500  
Input voltage  
V
IN  
Basic ordering  
unit (pieces)  
∗1  
∗2  
3000  
8000  
Collector current  
Power dissipation  
Junction temperature  
Storage temperature  
I
C (max)  
PD  
mA  
mW  
C
Part No.  
150  
DTD543EE  
DTD543EM  
−
Tj  
150  
−
Tstg  
C
−55 to +150  
∗1 Characteristics of built-in transistor.  
∗2 Each terminal mounted on a recommended land.  
zElectrical characteristics (Ta=25°C)  
zEquivalent circuit  
Parameter  
Symbol Min.  
Typ. Max. Unit  
Conditions  
=100µA  
=20mA  
=100mA / 5mA  
= 5V  
CC=12V, V  
=2V, I =100mA  
CE=10V  
V
V
I(off)  
−
2.5  
−
−
−
0.5  
−
V
V
CC=5V, IO  
OUT  
R1  
Input voltage  
V
IN  
I(on)  
O
=0.3V, I  
O
R2  
Output voltage  
Input current  
V
O(on)  
60  
−
300  
1.4  
0.5  
−
mV  
mA  
µA  
−
I
O
/I  
I
GND  
OUT  
I
I
−
V
V
V
V
I
Output current  
DC current gain  
Transition frequency  
Input resistance  
Resistance ratio  
I
O(off)  
−
−
I=0V  
IN  
G
I
115  
−
−
O
O
∗
f
T
260  
4.7  
1.0  
−
MHz  
kΩ  
−
,
I
E
=−5mA  
,
f=100MHz  
GND  
R1  
3.29  
0.8  
6.11  
1.2  
−
−
R
2/R1  
R1=4.7kΩ / R2=4.7kΩ  
∗ Characteristics of built-in transistor.  
1/1  
12

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