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DTD513ZETL

更新时间： 2024-10-29 13:07:27
品牌 Logo 应用领域
罗姆 - ROHM 晶体电阻器数字晶体管
页数 文件大小 规格书
3页 179K
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中文翻译

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DTD513ZETL 数据手册

 浏览型号DTD513ZETL的Datasheet PDF文件第2页浏览型号DTD513ZETL的Datasheet PDF文件第3页 
500mA / 12V Low VCE (sat) Digital transistors  
(with built-in resistors)  
DTD513ZE / DTD513ZM  
zApplications  
zDimensions (Unit : mm)  
Inverter, Interface, Driver  
DTD513ZE  
0.7  
1.6  
0.55  
0.3  
( )  
3
zFeature  
1) VCE (sat) is lower than conventional products.  
2) Built-in bias resistors enable the configuration of  
an inverter circuit without connecting external  
input resistors (see equivalent circuit).  
3) The bias resistors consist of thin-film resistors with  
complete isolation to allow negative biasing of the input.  
They also have the advantage of  
(
)
( )  
1
2
0.2  
0.2  
0.15  
(1) GND  
(2) IN  
(3) OUT  
0.5  
0.5  
1.0  
EMT3  
JEITA No. (SC-75A)  
JEDEC No. <SOT-416>  
Each lead has same dimensions  
Abbreviated symbol : Y21  
almost completely eliminating parasitic effects.  
4) Only the on / off conditions need to be set for operation,  
making the device design easy.  
DTD513ZM  
1.2  
0.32  
(3)  
( )( )  
1 2  
0.22  
(1) IN  
(2) GND  
(3) OUT  
0.13  
zStructure  
NPN epitaxial plannar silicon transistor  
(Resistor built-in type)  
0.4 0.4  
0.5  
0.8  
VMT3  
Each lead has same dimensions  
Abbreviated symbol : Y21  
zPackaging specifications  
Package  
EMT3  
Taping  
TL  
VMT3  
Taping  
T2L  
Packaging type  
Code  
Basic ordering  
unit (pieces)  
3000  
8000  
Part No.  
DTD513ZE  
DTD513ZM  
−
−
zAbsolute maximum ratings (Ta=25°C)  
zInner circuit  
Limits  
Parameter  
Symbol  
Unit  
OUT  
DTD513ZE DTD513ZM  
R1  
IN  
Supply voltage  
V
CC  
IN  
C (max)  
V
V
12  
−5 to +10  
500  
R2  
Input voltage  
V
GND  
OUT  
∗1  
∗2  
Collector current  
Power dissipation  
Junction temperature  
Storage temperature  
I
mA  
mW  
C
P
D
150  
IN  
Tj  
Tstg  
150  
GND  
C
−55 to +150  
∗1 Characteristics of built-in transistor.  
∗2 Each terminal mounted on a recommended land.  
R1  
=1.0kΩ / R =10kΩ  
2
www.rohm.com  
2009.05 - Rev.B  
1/2  
c
○ 2009 ROHM Co., Ltd. All rights reserved.  
123

中文翻译

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DTD513ZETL 替代型号

型号 品牌 替代类型 描述 数据表
DTD543ZMT2L ROHM

完全替代

 Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO

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