Datasheet > DSA8102S

DSA8102S

更新时间： 2024-11-09 20:01:47

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
4页	497K
描述
Small Signal Bipolar Transistor, 1A I(C), PNP

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中文翻译

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技术参数
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DSA8102S 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.8	最大集电极电流 (IC)：	1 A
配置：	Single	最小直流电流增益 (hFE)：	170
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	1 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

DSA8102S 数据手册

This product complies with the RoHS Directive (EU 2002/95/EC).

DSA8102

Silicon PNP epitaxial planar type

For low frequency output ampliﬁcation

DSA7102 in MT-2 through hole type package

 Package

ꢀCode

 Features

 Low collector-emitter saturation voltage V_CE(sat)

 Contributes to miniaturization of sets, mount area reduction

 Eco-friendly Halogen-free package

MT-2-A2-B

ꢀPin Name

1. Emitter

2. Collector

3. Base

 Packaging

Radial type : 2000 pcs / carton

 Absolute Maximum Ratings T_a= 25°C

 Marking Symbol: 4D

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

Unit

–80

–5

–1

–1.5

Peak collector current

I_CP

Collector power dissipation ^*

Junction temperature

P_C

°C

T_j

150

Storage temperature

stg

–55 to +150

Note) : Printed circuit board: Copper foil area of 1 cm²or more, and the board thickness

of 1.7 mm for the collector portion

 Electrical Characteristics T_a= 25°C±3°C

Parameter

Symbol

Conditions

Min

–80

–5

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

V_CBOI_C= –10 mA, I_E= 0

V_CEOI_C= –1 mA, I_B= 0

V_EBOI_E= –10 mA, I_C= 0

I_CBO

V_CB= –40 V, I_E= 0

– 0.1

340

h_FE1

V_CE= –2 V, I_C= –100 mA

V_CE= –2 V, I_C= –500 mA

120

Forward current transfer ratio ^*



h_FE2

Collector-emitter saturation voltage ^*

V_CE(sat)I_C= –500 mA, I_B= –50 mA

V_BE(sat)I_C= –500 mA, I_B= –50 mA

– 0.2

– 0.95

150

– 0.3

–1.2

Base-emitter saturation voltage ^*

Transition frequency

f_T

V_CE= –10 V, I_C= –50 mA

MHz

Collector output capacitance

C_ob

V_CB= –10 V, I_E= 0, f = 1 MHz

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. 1: Pulse measurement

2: Rank classiﬁcation

Code

Rank

h_FE1

120 to 240

4DR

170 to 340

4DS

Marking Symbol

Publication date: December 2011

Ver. AED

12 3 4

中文翻译

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与DSA8102S相关器件

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