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DSA9001R0L

更新时间： 2024-09-30 21:16:59
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
4页 791K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSMINI3-F3-B, SC-89, 3 PIN

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DSA9001R0L 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：HALOGEN FREE AND ROHS COMPLIANT, SSMINI3-F3-B, SC-89, 3 PINReach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：3.94Samacsys Description：DSA9001R0L, PNP Bipolar Transistor, -100 mA -50 V HFE:210 150 MHz, 3-Pin SSMini3 F3 B
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SINGLE最小直流电流增益 (hFE)：210
JESD-30 代码：R-PDSO-F3湿度敏感等级：1
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：150 MHz
Base Number Matches：1

DSA9001R0L 数据手册

 浏览型号DSA9001R0L的Datasheet PDF文件第2页浏览型号DSA9001R0L的Datasheet PDF文件第3页浏览型号DSA9001R0L的Datasheet PDF文件第4页 
DSA9001  
Silicon PNP epitaxial planar type  
For general amplification  
Complementary to DSC9001  
DSA5001 in SSMini3 type package  
Unit: mm  
Features  
High forward current transfer ratio hFE with excellent linearity  
Low collector-emitter saturation voltage VCE(sat)  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  
Marking Symbol: A1  
Packaging  
DSA9001×0L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
Absolute Maximum Ratings Ta = 25°C  
1: Base  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
–60  
Unit  
V
2: Emitter  
3: Collector  
Panasonic  
JEITA  
–50  
V
SSMini3-F3-B  
SC-89  
–7  
V
Code  
SOT-490  
–100  
mA  
mA  
mW  
°C  
Peak collector current  
ICP  
–200  
Collector power dissipation  
Junction temperature  
PC  
125  
Tj  
150  
Operating ambient temperature  
Storage temperature  
Topr  
–40 to +85  
–55 to +150  
°C  
T
stg  
°C  
Electrical Characteristics Ta = 25°C±3°C  
Parameter  
Symbol  
Conditions  
Min  
–60  
–50  
–7  
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
VCBO IC = –10 mA, IE = 0  
VCEO IC = –2 mA, IB = 0  
VEBO IE = –10 mA, IC = 0  
V
V
ICBO  
ICEO  
hFE  
VCB = –20 V, IE = 0  
VCE = –10 V, IB = 0  
VCE = –10 V, IC = –2 mA  
– 0.1  
–100  
460  
mA  
mA  
1
Forward current transfer ratio *  
210  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = –100 mA, IB = –10 mA  
– 0.2  
150  
– 0.5  
V
fT  
VCE = –10 V, IC = –2 mA  
MHz  
Collector output capacitance  
(Common base, input open circuited)  
Cob  
VCB = –10 V, IE = 0, f = 1 MHz  
2
pF  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. 1: Rank classification  
*
Code  
Rank  
R
R
S
S
0
No-rank  
210 to 460  
A1  
hFE  
210 to 340  
A1R  
290 to 460  
A1S  
Marking Symbol  
Product of no-rank is not classified and have no marking symbol for rank.  
Publication date: February 2014  
Ver. EED  
1
1234

中文翻译

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