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DSA900500A

更新时间： 2024-11-09 20:53:15
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
3页 485K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSMINI3-F3-B, 3 PIN

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中文翻译

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DSA900500A 技术参数

生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.75风险等级：5.73
最大集电极电流 (IC)：0.2 A集电极-发射极最大电压：50 V
配置：SINGLE最小直流电流增益 (hFE)：150
JESD-30 代码：R-PDSO-F3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：PNP表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：150 MHzBase Number Matches：1

DSA900500A 数据手册

 浏览型号DSA900500A的Datasheet PDF文件第2页浏览型号DSA900500A的Datasheet PDF文件第3页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DSA9005  
Silicon PNP epitaxial planar type  
For general amplification  
Complementary to DSC9005  
DSA5005 in SSMini3 type package  
Features  
Package  
Low collector-emitter saturation voltage VCE(sat)  
ꢀCode  
Contributes to miniaturization of sets, reduction of component count.  
High forward current transfer ratio hFE with excellent linearity  
Eco-friendly Halogen-free package  
SSMini3-F3-B  
Package dimension clicks here.→  
Click!  
Packaging  
ꢀPin Name  
1. Base  
DSA9005×0L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
2. Emitter  
3. Collector  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
–60  
Unit  
V
Marking Symbol: A3  
–50  
V
–6  
V
–200  
–300  
125  
mA  
mA  
mW  
°C  
Peak collector current  
ICP  
Collector power dissipation  
Junction temperature  
PC  
Tj  
150  
Storage temperature  
T
stg  
–55 to +150  
°C  
Electrical Characteristics Ta = 25°C±3°C  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
V
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Emitter-base cutoff current (Collector open)  
VCEO IC = –100 mA, IB = 0  
–50  
ICBO  
IEBO  
hFE1  
hFE2  
VCB = –60 V, IE = 0  
– 0.1  
– 0.1  
390  
mA  
mA  
VEB = –6 V, IC = 0  
VCE = –6 V, IC = –1 mA  
VCE = –6 V, IC = – 0.1 mA  
150  
90  
Forward current transfer ratio *  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = –100 mA, IB = –10 mA  
– 0.3  
V
fT  
VCE = –6 V, IC = –10 mA  
150  
5.0  
MHz  
Collector output capacitance  
Cob  
VCB = –6 V, IE = 0, f = 1 MHz  
pF  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Code  
Rank  
R
R
S
S
0
No-rank  
150 to 390  
A3  
hFE1  
150 to 270  
A3R  
200 to 390  
A3S  
Marking Symbol  
Product of no-rank is not classified and have no marking symbol for rank.  
Publication date: February 2012  
Ver. AED  
1
123

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