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DSA8101R PDF预览

DSA8101R

更新时间: 2024-11-05 19:05:43
品牌 Logo 应用领域
松下 - PANASONIC 放大器晶体管
页数 文件大小 规格书
3页 400K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, MT-2-A1-B, 3 PIN

DSA8101R 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.8
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):130
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):120 MHzBase Number Matches:1

DSA8101R 数据手册

 浏览型号DSA8101R的Datasheet PDF文件第2页浏览型号DSA8101R的Datasheet PDF文件第3页 
DSA8101  
Total pages  
page  
Tentative  
DSA8101  
Silicon PNP epitaxial planar type  
For low-frequency output amplification  
Marking Symbol 4C  
Package Code : MT-2-A1-B  
Absolute Maximum RatingsTa = 25 °C  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-80  
-80  
-5  
Unit  
V
V
V
A
1. Emitter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
Collector  
Pin name  
2.  
3.  
Base  
-0.5  
Peak collector current  
ICp  
Pc  
Tj  
Tstg  
-1  
1
A
*1  
W
°C  
°C  
Collector power dissipation  
Junction temperature  
Storage temperature  
Note: *1  
150  
-55 to +150  
Copper plate at the collector is more than 1.0cm2 in area, 1.7mm in thickness.  
Electrical CharacteristicsTa = 25 °C±3 °C  
Parameter  
Symbol  
Conditions  
Min Typ Max  
Unit  
V
V
V
μA  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
VCBO IC = -10 μA, IE = 0  
VCEO IC = -100 μA, IB = 0  
VEBO IE = -10 μA, IC = 0  
-80  
-80  
-5  
ICBO  
hFE1  
hFE2  
VCB = -20 V, IE = 0  
VCE = -10 V, IC = -150 mA  
VCE = -5 V, IC = -500 mA  
-0.1  
*1, *2  
90  
50  
220  
Forward current transfer ratio  
Forward current transfer ratio  
-
*2  
100  
*2  
VCE(sat) IC = -300 mA, IB = -30 mA  
VBE(sat) IC = -300 mA, IB = -30 mA  
-0.2 -0.4  
-0.9 -1.2  
120  
V
V
MHz  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
*2  
Transition frequency  
fT  
VCE = -10 V, IC = -50 mA  
Collector output capacitance  
(Common base, input open circuited)  
Cob  
VCB = -10 V, IE = 0, f = 1 MHz  
10  
30  
pF  
Note: Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring  
methods for transistors.  
*1 Rank classification  
Code  
Rank  
hFE1  
Marking symbol  
Q
Q
R
R
0
No-rank  
90 to 220  
4C  
90 to 155 130 to 220  
4CQ 4CR  
Product of no-rank is not classified and have no marking symbol for rank.  
*2  
Pulse test  
Packing  
Radial type : 2 000 pcs / carton  
2010.1.28  
Prepared  
2010.7.27  
Revised  
Semiconductor Company, Panasonic Corporation  

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