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DS1245W-100IND+ PDF预览

DS1245W-100IND+

更新时间: 2024-11-12 19:18:23
品牌 Logo 应用领域
美信 - MAXIM 静态存储器内存集成电路
页数 文件大小 规格书
10页 212K
描述
Non-Volatile SRAM Module, 128KX8, 100ns, CMOS, 0.740 INCH, ROHS COMPLIANT, DIP-32

DS1245W-100IND+ 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:MODULE
包装说明:DIP, DIP32,.6针数:32
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8473.30.11.40风险等级:5.35
最长访问时间:100 ns其他特性:10 YEAR DATA RETENTION
JESD-30 代码:R-XDMA-P32JESD-609代码:e3
内存密度:1048576 bit内存集成电路类型:NON-VOLATILE SRAM MODULE
内存宽度:8功能数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX8封装主体材料:UNSPECIFIED
封装代码:DIP封装等效代码:DIP32,.6
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 V认证状态:Not Qualified
最大待机电流:0.00025 A子类别:SRAMs
最大压摆率:0.05 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:NO技术:CMOS
温度等级:INDUSTRIAL端子面层:MATTE TIN
端子形式:PIN/PEG端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DS1245W-100IND+ 数据手册

 浏览型号DS1245W-100IND+的Datasheet PDF文件第2页浏览型号DS1245W-100IND+的Datasheet PDF文件第3页浏览型号DS1245W-100IND+的Datasheet PDF文件第4页浏览型号DS1245W-100IND+的Datasheet PDF文件第5页浏览型号DS1245W-100IND+的Datasheet PDF文件第6页浏览型号DS1245W-100IND+的Datasheet PDF文件第7页 
19-5640; Rev 11/10  
DS1245W  
3.3V 1024k Nonvolatile SRAM  
www.maxim-ic.com  
FEATURES  
PIN ASSIGNMENT  
. 10 years minimum data retention in the  
absence of external power  
NC  
A16  
A14  
A12  
A7  
1
32  
31  
VCC  
A15  
NC  
WE  
A13  
A8  
2
3
4
30  
29  
. Data is automatically protected during power  
loss  
. Replaces 128k x 8 volatile static RAM,  
EEPROM or Flash memory  
. Unlimited write cycles  
. Low-power CMOS  
5
6
28  
27  
A6  
A5  
A4  
A9  
7
8
26  
25  
A11  
OE  
A10  
CE  
A3  
9
24  
23  
A2  
10  
. Read and write access times of 100ns  
. Lithium energy source is electrically  
disconnected to retain freshness until power is  
applied for the first time  
. Optional industrial temperature range of  
-40°C to +85°C, designated IND  
. JEDEC standard 32-pin DIP package  
. PowerCap Module (PCM) package  
A1  
11  
12  
22  
21  
DQ7  
DQ6  
A0  
13  
14  
15  
16  
20  
19  
18  
17  
DQ0  
DQ1  
DQ2  
DQ5  
DQ4  
DQ3  
GND  
32-PIN Encapsulated Package  
740-Mil Extended  
-
-
Directly surface-mountable module  
Replaceable snap-on PowerCap provides  
lithium backup battery  
Standardized pinout for all nonvolatile  
SRAM products  
34  
NC  
NC  
A14  
A13  
A12  
A11  
A10  
A9  
A8  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
1
NC  
A15  
A16  
33  
32  
31  
30  
2
3
4
-
-
NC  
5
VCC  
6
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
WE  
OE  
CE  
7
Detachment feature on PowerCap allows  
easy removal using a regular screwdriver  
8
9
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
10  
11  
12  
13  
14  
15  
16  
17  
VBAT  
GND  
DQ2  
DQ1  
DQ0  
GND  
34-Pin PowerCap Module (PCM)  
(Uses DS9034PC+ or DS9034PCI+ PowerCap)  
PIN DESCRIPTION  
A0 - A16  
DQ0 - DQ7  
CE  
- Address Inputs  
- Data In/Data Out  
- Chip Enable  
- Write Enable  
- Output Enable  
- Power (+3.3V)  
- Ground  
WE  
OE  
VCC  
GND  
NC  
- No Connect  
1 of 10  

DS1245W-100IND+ 替代型号

型号 品牌 替代类型 描述 数据表
DS1245W-100+ MAXIM

完全替代

3.3V 1024k Nonvolatile SRAM
DS1245W-100IND MAXIM

完全替代

Non-Volatile SRAM Module, 128KX8, 100ns, CMOS, 0.740 INCH, DIP-32
DS1245W-100 MAXIM

完全替代

Non-Volatile SRAM Module, 128KX8, 100ns, CMOS, 0.740 INCH, DIP-32

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