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DN2470 PDF预览

DN2470

更新时间: 2023-12-06 20:02:33
品牌 Logo 应用领域
美国微芯 - MICROCHIP /
页数 文件大小 规格书
11页 461K
描述
The DN2470 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertic

DN2470 数据手册

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DN2470  
N-Channel, Depletion-Mode, Vertical DMOS FET  
Features  
Description  
• High-input impedance  
This low threshold, depletion-mode, normally-on, tran-  
sistor utilizes an advanced vertical Diffusion Metal  
Oxide Semiconductor (DMOS) structure and a well  
proven silicon-gate manufacturing process. This com-  
bination produces a device with the power-handling  
capabilities of bipolar transistors, plus the high-input  
impedance and positive-temperature coefficient inher-  
ent in Metal-Oxide Semiconductor (MOS) devices.  
Characteristic of all MOS structures, this device is free  
from thermal runaway and thermally-induced second-  
ary breakdown.  
• Low-input capacitance  
• Fast switching speeds  
• Low on-resistance  
• Free from secondary breakdown  
• Low input and output leakage  
Applications  
• Normally-on switches  
• Solid state relays  
• Converters  
Vertical DMOS Field-Effect Transistors (FETs) are ide-  
ally suited to a wide range of switching and amplifying  
applications where a very low threshold voltage, high  
breakdown voltage, high input impedance, low input  
capacitance, and fast switching speeds are desired.  
• Linear amplifiers  
• Constant current sources  
• Battery operated systems  
Telecom  
2015 Microchip Technology Inc.  
DS20005410A-page 1  

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