5秒后页面跳转
捷配首页

Datasheet > DMN3033LSDQ-13
DMN3033LSDQ-13 PDF预览

DMN3033LSDQ-13

更新时间： 2024-11-07 20:48:07
品牌 Logo 应用领域
美台 - DIODES 开关脉冲光电二极管晶体管
页数 文件大小 规格书
6页 395K
描述
Power Field-Effect Transistor, 6.9A I(D), 30V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

阅读下载

中文翻译

获取价格

DMN3033LSDQ-13 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G8Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：15 weeks
风险等级：1.66其他特性：HIGH RELIABILITY
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (ID)：6.9 A最大漏源导通电阻：0.02 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G8
JESD-609代码：e3元件数量：2
端子数量：8工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：30 A
参考标准：AEC-Q101表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

DMN3033LSDQ-13 数据手册

 浏览型号DMN3033LSDQ-13的Datasheet PDF文件第2页浏览型号DMN3033LSDQ-13的Datasheet PDF文件第3页浏览型号DMN3033LSDQ-13的Datasheet PDF文件第4页浏览型号DMN3033LSDQ-13的Datasheet PDF文件第5页浏览型号DMN3033LSDQ-13的Datasheet PDF文件第6页 
DMN3033LSDQ  
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET  
Product Summary  
Features  
Low On-Resistance  
ID max  
BVDSS  
RDS(ON) max  
TA = +25°C  
Low Gate Threshold Voltage  
Low Input Capacitance  
20mΩ @ VGS = 10V  
27mΩ @ VGS = 4.5V  
6.9A  
5.8A  
Fast Switching Speed  
30V  
Low Input/Output Leakage  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
PPAP Capable (Note 4)  
Mechanical Data  
Description  
This MOSFET is designed to minimize the on-state resistance  
(RDS(on)) and yet maintain superior switching performance, making it  
ideal for high-efficiency power management applications.  
Case: SO-8  
Case Material: Molded Plastic, “Green” Molding Compound;  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals Connections: See Diagram  
Backlighting  
Power Management Functions  
DC-DC Converters  
Terminals: Finish - Matte Tin Annealed over Copper Leadframe;  
Solderable per MIL-STD-202, Method 208  
Weight: 0.072grams (Approximate)  
SO-8  
D1  
D2  
S1  
G1  
S2  
G2  
D1  
D1  
D2  
D2  
G1  
G2  
Top View  
Internal Schematic  
S1  
S2  
N-channel MOSFET  
Top View  
N-channel MOSFET  
Ordering Information (Note 5)  
Part Number  
DMN3033LSDQ-13  
Case  
SO-8  
Packaging  
2,500/Tape & Reel  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"  
and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the  
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.  
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.  
Marking Information  
SO-8  
8
5
= Manufacturer’s Marking  
N3033LD = Product Type Marking Code  
YYWW = Date Code Marking  
YY = Year (ex: 13 = 2013)  
N3033LD  
YY WW  
WW = Week (01 - 53)  
1
4
1 of 6  
www.diodes.com  
July 2015  
© Diodes Incorporated  
DMN3033LSDQ  
Document number: DS37965 Rev. 1 - 2  
123456

中文翻译

下载PDF

与DMN3033LSDQ-13相关器件

型号 品牌 获取价格 描述 数据表
DMN3033LSN DIODES

获取价格

 		N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3033LSN TYSEMI

获取价格

 		N-CHANNEL ENHANCEMENT MODE MOSFET Low Input/Output Leakage
DMN3033LSN-7 DIODES

获取价格

 		N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3033LSNQ DIODES

获取价格

 		N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3033LSNQ-7 DIODES

获取价格

 		Power Field-Effect Transistor,
DMN3035LWN DIODES

获取价格

 		30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3035LWN-13 DIODES

获取价格

 		Small Signal Field-Effect Transistor,
DMN3035LWN-7 DIODES

获取价格

 		Small Signal Field-Effect Transistor,
DMN3042L DIODES

获取价格

 		Low On-Resistance
DMN3042L_15 DIODES

获取价格

 		N-CHANNEL ENHANCEMENT MODE MOSFET

与DMN3033LSDQ-13相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证