Datasheet > DMN3051L

DMN3051L

更新时间： 2024-09-19 12:53:07

品牌	Logo	应用领域
TYSEMI		栅极
页数	文件大小	规格书
2页	227K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET Low Gate Threshold Voltage

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Product specification

DMN3051L

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits

•

Low On-Resistance:

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

I_D

V_(BR)DSS

R_DS(ON)

T_A= 25°C

5.8A

4.5A

38mΩ @ V_GS= -10V

64mΩ @ V_GS= -4.5V

30V

Low Input/Output Leakage

Lead-Free Finish; RoHS compliant (Note 1)

Halogen and Antimony Free. “Green” Device (Note 2)

Qualified to AEC-Q101 Standards for High Reliability

Description and Applications

Mechanical Data

This new generation MOSFET has been designed to minimize the

on-state resistance (R_DS(on)) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

•

Case: SOT23

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish – Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram

Weight: 0.008 grams (approximate)

•

Load Switch

DC-DC Converters

Power management functions

•

SOT23

Drain

Gate

Source

Top View

Equivalent Circuit

Top View

Ordering Information ^{(Note 3)}

Part Number

Case

Packaging

DMN3051L-7

SOT23

3000/Tape & Reel

Notes:

1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free

Marking Information

3N5 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: U = 2007)

3N5

M = Month (ex: 9 = September)

Date Code Key

Year

2007

2008

2009

2010

2011

2012

2013

2014

2015

2016

2017

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

http://www.twtysemi.com

sales@twtysemi.com

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