Datasheet > DMN3033LSN

DMN3033LSN

更新时间： 2024-11-07 09:54:15

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
5页	129K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN3033LSN 数据手册

DMN3033LSN

N-CHANNEL ENHANCEMENT MODE MOSFET

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Features

Mechanical Data

•

Low Gate Charge

Low R_DS(ON)

•

Case: SC-59

Case Material - Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram

Marking Information: See Page 4

Ordering Information: See Page 4

Weight: 0.008 grams (approximate)

•

30 mΩ @V_GS= 10V

40 mΩ @V_GS= 4.5V

•

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

"Green" Device (Note 4)

•

Drain

SC-59

Gate

Source

Top View

Equivalent Circuit

Pin Configuration

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Unit

Gate-Source Voltage

V_GSS

±20

Drain Current (Note 1) Continuous

T_A= 25°C

T_A= 70°C

I_D

Pulsed Drain Current (Note 2)

I_DM

I_S

Body-Diode Continuous Current (Note 1)

2.25

Thermal Characteristics @T_A= 25°C unless otherwise specified

Characteristic

Total Power Dissipation (Note 1)

Symbol

P_D

R_θ

Value

1.4

Unit

Thermal Resistance, Junction to Ambient (Note 1) t ≤10s

°C /W

°C

Operating and Storage Temperature Range

-55 to +150

T_J, T_STG

Notes:

1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s.

2. Repetitive Rating, pulse width limited by junction temperature.

3. No purposefully added lead.

4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

1 of 5

www.diodes.com

January 2010

DMN3033LSN

Document number: DS31116 Rev. 5 - 2

12 3 4 5

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