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DMN3052LSS-13

更新时间： 2024-02-02 03:19:23
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SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN3052LSS-13 数据手册

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DMN3052LSS  
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET  
Please click here to visit our online spice models database.  
Mechanical Data  
Features  
•
Low On-Resistance  
•
•
Case: SO-8  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals Connections: See Diagram  
Terminals: Finish - Matte Tin annealed over Copper leadframe.  
Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.072 grams (approximate)  
•
•
•
30mΩ @ VGS = 10V  
40mΩ @ VGS = 4.5V  
63mΩ @ VGS = 2.5V  
•
•
•
•
•
•
•
•
•
•
Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
Lead Free By Design/RoHS Compliant (Note 2)  
"Green" Device (Note 4)  
Qualified to AEC-Q101 Standards for High Reliability  
•
•
•
SO-8  
S
D
S
S
G
D
D
D
TOP VIEW  
Internal Schematic  
TOP VIEW  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
Value  
30  
Units  
V
V
Gate-Source Voltage  
VGSS  
±12  
T
A = 25°C  
Drain Current (Note 1)  
Steady  
State  
7.1  
5.7  
A
A
ID  
TA = 70°C  
Pulsed Drain Current (Note 3)  
28  
IDM  
Thermal Characteristics  
Characteristic  
Total Power Dissipation (Note 1)  
Symbol  
Value  
2.5  
Unit  
W
PD  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
50  
°C/W  
°C  
Rθ  
TJ, TSTG  
JA  
-55 to +150  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 5)  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
30  
V
BVDSS  
IDSS  
⎯
⎯
⎯
1
VGS = 0V, ID = 250μA  
VDS = 30V, VGS = 0V  
⎯
μA  
V
V
GS = ±12V, VDS = 0V  
GS = ±19V, VDS = 0V  
⎯
⎯
⎯
⎯
±80  
±800  
Gate-Source Leakage  
nA  
IGSS  
ON CHARACTERISTICS (Note 5)  
Gate Threshold Voltage  
0.62  
0.9  
1.2  
V
VGS(th)  
VDS = VGS, ID = 250μA  
V
V
GS = 10V, ID = 7.1A  
GS = 4.5V, ID = 6.4A  
24  
30  
50  
30  
40  
63  
Static Drain-Source On-Resistance  
RDS (ON)  
⎯
mΩ  
VGS = 2.5V, ID = 5.0A  
VDS = 5V, ID = 5.1A  
VGS = 0V, IS = 2.1A  
Forward Transconductance  
Diode Forward Voltage (Note 5)  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
10  
S
V
gfs  
⎯
⎯
⎯
1.16  
0.78  
VSD  
555  
109  
82  
pF  
pF  
pF  
Ciss  
Coss  
Crss  
⎯
⎯
⎯
⎯
⎯
⎯
V
DS = 5V, VGS = 0V  
Output Capacitance  
f = 1.0MHz  
Reverse Transfer Capacitance  
Notes:  
1. Device mounted on 2 oz copper pad layout with RθJA = 50°C/W.  
2. No purposefully added lead.  
3. Pulse width ≤10μS, Duty Cycle ≤1%.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
5. Short duration pulse test used to minimize self-heating effect.  
1 of 5  
www.diodes.com  
September 2009  
© Diodes Incorporated  
DMN3052LSS  
Document number: DS31583 Rev. 3 - 2  
12345

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