Datasheet > DMN3053L

DMN3053L

更新时间： 2024-09-20 14:55:15

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	350K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN3053L 数据手册

DMN3053L

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits



Low On-Resistance

I_D

V_(BR)DSS

R_DS(ON)

T_A= +25°C

Low Gate Threshold Voltage

Low Input Capacitance

4.0 A

3.5A

45mΩ @ V_GS= 10V

50mΩ @ V_GS= 4.5V

30V

Fast Switching Speed

Low Input/Output Leakage

ESD Protected Gate

Description

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

This new generation MOSFET has been designed to minimize the

on-state resistance (R_DS(ON)) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Mechanical Data



Case: SOT23

Applications

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish – Matte Tin annealed over Copper



Load Switch



DC-DC Converters

Power management functions

leadframe. Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram



Weight: 0.008 grams (approximate)

SOT23

ESD PROTECTED

Equivalent Circuit

Top View

Ordering Information (Note 4)

Part Number

DMN3053L-7

DMN3053L-13

Case

SOT23

Packaging

3000/Tape & Reel

10000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

3N6 = Product Type Marking Code

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)

M = Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y or Y = Year (ex: A = 2013)

M = Month (ex: 9 = September)

Shanghai A/T Site

Chengdu A/T Site

Date Code Key

Year

2007

2008

2009

2010

2011

2012

2013

2014

2015

2016

2017

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 6

www.diodes.com

April 2014

DMN3053L

Document number: DS36883 Rev. 2 - 2

12 3 4 5 6

中文翻译

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与DMN3053L相关器件

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DMN3053L-13	DIODES	获取价格	Small Signal Field-Effect Transistor
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DMN3055LFDB	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3055LFDB-13	DIODES	获取价格	Small Signal Field-Effect Transistor,
DMN3055LFDB-7	DIODES	获取价格	Small Signal Field-Effect Transistor,
DMN3055LFDBQ	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3060LCA3	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3060LVT	DIODES	获取价格	30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3060LW	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3060LWQ	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET

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