Datasheet > DMN3035LWN

DMN3035LWN

更新时间： 2024-09-18 14:55:03

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	336K
描述
30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN3035LWN 数据手册

DMN3035LWN

30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

Product Summary



Low On-Resistance

I_{D MAX}

Low Input Capacitance

BV_DSS

R_{DS(ON) MAX}

T_A= +25°C

Fast Switching Speed

35mΩ @ V_GS= 10V

45mΩ @ V_GS= 4.5V

5.5A

4.9A

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

30V

Description

This MOSFET is designed to minimize the on-state resistance

(R_DS(ON)) and yet maintain superior switching performance, making it

ideal for high-efficiency power management applications.

Mechanical Data



Case: V-DFN3020-8 (Type N)

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram



Applications



DC Motor Control

Terminals: Finish – NiPdAu Annealed over Copper Leadframe.

DC-AC Inverters

Solderable per MIL-STD-202, Method 208



Weight: 0.011 grams (Approximate)

V-DFN3020-8 (Type N)

Pin 1

Bottom View

Pin Configuration

Bottom View

Q1 N-Channel MOSFET

Equivalent Circuit

Q2 N-Channel MOSFET

Ordering Information (Note 4)

Part Number

DMN3035LWN-7

DMN3035LWN-13

Case

Packaging

3,000/Tape & Reel

10,000/Tape & Reel

V-DFN3020-8 (Type N)

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/quality/lead_free.html.

Marking Information

V-DFN3020-8 (Type N)

N3 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: D = 2016)

M = Month (ex: 9 = September)

Date Code Key

Year

2016

2017

2018

2019

2020

2021

2022

2023

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 7

www.diodes.com

October 2016

DMN3035LWN

Document number: DS37528 Rev. 3 - 2

12 3 4 5 6 7

中文翻译

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与DMN3035LWN相关器件

型号	品牌	获取价格	描述	数据表
DMN3035LWN-13	DIODES	获取价格	Small Signal Field-Effect Transistor,
DMN3035LWN-7	DIODES	获取价格	Small Signal Field-Effect Transistor,
DMN3042L	DIODES	获取价格	Low On-Resistance
DMN3042L_15	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3042L-13	DIODES	获取价格	Low On-Resistance
DMN3042L-7	DIODES	获取价格	Low On-Resistance
DMN3042LFDF	DIODES	获取价格	30V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3050S	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3050S-7	DIODES	获取价格	Power Field-Effect Transistor, 5.2A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Me
DMN3051L	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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