Datasheet > DIM600DCM17-A000_11

DIM600DCM17-A000_11

更新时间： 2024-02-21 19:25:57

品牌	Logo	应用领域
DYNEX		双极性晶体管
页数	文件大小	规格书
8页	358K
描述
IGBT Chopper Module

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中文翻译

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数据手册

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DIM600DCM17-A000_11 数据手册

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DIM600DCM17-A000

IGBT Chopper Module

Replaces DS5491-4.2

DS5491-5 March 2011 (LN26753)

FEATURES

KEY PARAMETERS



10µs Short Circuit Withstand

High Thermal Cycling Capability

Non Punch Through Silicon

V_CES

V_CE(sat)* (typ)

I_C

I_C(PK)

1700V

2.7V

600A

1200A

(max)

Isolated AlSiC Base With AlN Substrates

Lead Free Construction

* Measured at the power busbars, not the auxiliary terminals

1(E)

2(C)

APPLICATIONS

5(E)

6(G)



High Reliability Inverters

Motor Controllers

Traction Drives

The Powerline range of high power modules includes

half bridge, chopper, dual, single and bi-directional

switch configurations covering voltages from 600V to

3300V and currents up to 2400A.

7(C)

4(E)

3(C)

The DIM600DCM17-A000 is a 1700V, n-channel

enhancement mode, insulated gate bipolar transistor

(IGBT) chopper module. The IGBT has a wide reverse

bias safe operating area (RBSOA) plus 10μs short

circuit withstand. This device is optimised for traction

drives and other applications requiring high thermal

cycling capability.

Fig. 1 Circuit configuration

The module incorporates an electrically isolated base

plate and low inductance construction enabling circuit

designers to optimise circuit layouts and utilise

grounded heat sinks for safety.

ORDERING INFORMATION

Order As:

DIM600DCM17-A000

Note: When ordering, please use the complete part

number

Outline type code: D

(See Fig. 11 for further information)

Fig. 2 Package

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures

1/8

www.dynexsemi.com

12 3 4 5 6 7 8

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