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DIM75CHS12-E PDF预览

DIM75CHS12-E

更新时间: 2024-09-26 23:47:03
品牌 Logo 应用领域
其他 - ETC 双极性晶体管
页数 文件大小 规格书
8页 177K
描述
IGBT Modules - Half Bridge

DIM75CHS12-E 数据手册

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DIM75CHS12-E000  
Half Bridge IGBT Module  
PDS5711-1.2 January 2004  
FEATURES  
KEY PARAMETERS  
VCES  
VCE(sat)  
IC  
1200V  
1.7V  
75A  
I Trench Gate Field Stop Technology  
I Low Conduction Losses  
I Low Switching Losses  
(typ)  
(max)  
(max)  
IC(PK)  
150A  
I 10µs Short Circuit Withstand  
APPLICATIONS  
I Inverters  
7(E2)  
6(G2)  
I Motor Controllers  
I UPS  
1(E1C2)  
2(E2)  
3(C1)  
I Electronic Welders  
4(G1)  
5(E1)  
The Powerline range of high power modules includes half  
bridge, chopper, dual, single and bi-directional switch  
configurations covering voltages from 600V to 3300V and  
currents up to 3600A.  
The DIM75CHS12-E000 is a half bridge 1200V, n channel  
enhancement mode, insulated gate bipolar transistor (IGBT)  
module. The IGBT has a wide reverse bias safe operating area  
(RBSOA) plus full 10µs short circuit withstand.  
Fig. 1 Half bridge circuit diagram  
The module incorporates an electrically isolated base plate  
and low inductance construction enabling circuit designers to  
optimise circuit layouts and utilise grounded heat sinks for safety.  
ORDERING INFORMATION  
Order As:  
DIM75CHS12-E000  
Note: When ordering, please use the complete part number.  
Outline type code: C  
(See package details for further information)  
Fig. 2 Electrical connections - (not to scale)  
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.  
1/8  
www.dynexsemi.com  

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