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DIM800DDS12-A000 PDF预览

DIM800DDS12-A000

更新时间: 2024-02-06 21:29:02
品牌 Logo 应用领域
DYNEX 晶体开关晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
8页 319K
描述
Dual Switch IGBT Module

DIM800DDS12-A000 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Contact Manufacturer包装说明:FLANGE MOUNT, R-PUFM-X12
针数:12Reach Compliance Code:unknown
风险等级:5.73Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):800 A
集电极-发射极最大电压:1200 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 代码:R-PUFM-X12元件数量:2
端子数量:12封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):1700 ns
标称接通时间 (ton):620 nsBase Number Matches:1

DIM800DDS12-A000 数据手册

 浏览型号DIM800DDS12-A000的Datasheet PDF文件第2页浏览型号DIM800DDS12-A000的Datasheet PDF文件第3页浏览型号DIM800DDS12-A000的Datasheet PDF文件第4页浏览型号DIM800DDS12-A000的Datasheet PDF文件第5页浏览型号DIM800DDS12-A000的Datasheet PDF文件第6页浏览型号DIM800DDS12-A000的Datasheet PDF文件第7页 
DIM800DDS12-A000  
Dual Switch IGBT Module  
Replaces DS5540-2.2  
DS5540-3 November 2009 (LN26746)  
FEATURES  
KEY PARAMETERS  
10µs Short Circuit Withstand  
High Thermal Cycling Capability  
Non Punch Through Silicon  
Isolated Cu Base with Al2O3 Substrates  
Lead Free construction  
VCES  
VCE(sat) * (typ)  
IC  
IC(PK)  
1200V  
2.2 V  
800A  
(max)  
(max)  
1600A  
* Measured at the power busbars, not the auxiliary terminals  
2(C)  
1(E)  
APPLICATIONS  
5(E)  
6(G)  
12(C)  
11(G)  
High Reliability Inverters  
Motor Controllers  
The Powerline range of high power modules includes  
half bridge, chopper, dual, single and bi-directional  
switch configurations covering voltages from 1200V to  
6500V and currents up to 2400A.  
10(E)  
7(C)  
3(C)  
4(E)  
The DIM800DDS12-A000 is a dual switch 1200V, n-  
channel enhancement mode, insulated gate bipolar  
transistor (IGBT) module. The IGBT has a wide  
reverse bias safe operating area (RBSOA) plus 10μs  
short circuit withstand. This device is optimised for  
traction drives and other applications requiring high  
thermal cycling capability.  
Fig. 1 Circuit configuration  
The module incorporates an electrically isolated base  
plate and low inductance construction enabling circuit  
designers to optimise circuit layouts and utilise  
grounded heat sinks for safety.  
ORDERING INFORMATION  
Order As:  
DIM800DDS12-A000  
Note: When ordering, please use the complete part  
number  
Outline type code: D  
(See Fig. 11 for further information)  
Fig. 2 Package  
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures  
1/8  
www.dynexsemi.com  

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