Datasheet > DIMD10A_10

DIMD10A_10

更新时间： 2024-01-29 03:13:56

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
4页	87K
描述
DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

DIMD10A_10 数据手册

DIMD10A

DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT

Features

Mechanical Data

•

Epitaxial Planar Die Construction

Built-In Biasing Resistors

One 500mA PNP and One 100mA NPN

Lead Free/RoHS Compliant (Note 1)

“Green” Devices (Note 2)

•

Case: SC-74R

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram

Terminals: Finish - Matte Tin Finish annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

•

Qualified to AEC-Q101 Standards for High Reliability

•

Marking Information: See Table and Page 3

Ordering Information: See Page 3

Weight: 0.015 grams (approximate)

Part Number

Tr1

Tr2

0.1K

10K

Marking

DIMD10A

C73

R₁

T_r2

R₂

T_r1

R₁

Device Schematic

Maximum Ratings PNP Section Tr1 @T_A= 25°C unless otherwise specified

Characteristic

Symbol

V_CC

V_IN

Value

-50

Unit

Supply Voltage

Input Voltage

Output Current

-5 to +5

-500

I_O

Maximum Ratings NPN Section Tr2 @T_A= 25°C unless otherwise specified

Characteristic

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

100

Thermal Characteristics

Characteristic

Power Dissipation

Symbol

P_D

Value

300*

Unit

°C

Operating and Storage Temperature Range

-55 to +150

T_J, T_STG

* Not to exceed 200mW for either Tr1 or Tr2.

Electrical Characteristics PNP Section Tr1 @T_A= 25°C unless otherwise specified

Characteristic

Symbol

V_l(off)

V_l(on)

V_O(on)

I_l

Min

-0.3

⎯

Typ

⎯

Max Unit

Test Condition

V_CC= -5V, I_O= -100μA

V_O= 0.3, I_O= -100mA

I_O= -100mA/-5mA

V_I= -2V

⎯

-1.5

Input Voltage

Output Voltage

Input Current

-0.1

-0.3

-25

-0.5

⎯

Output Current

DC Current Gain

I_O(off)

G_l

⎯

μA V_CC= -50V, V_I= 0V

⎯

Gain-Bandwidth Product*

200

MHz

V_CE= -10V, I_E= -50mA, f = 100MHz

f_T

⎯

* Transistor - For Reference Only

Notes:

1. No purposefully added lead.

2. “Green” devices, Halogen and Antimony Free, Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com

1 of 4

www.diodes.com

September 2010

DIMD10A

Document number: DS30391 Rev. 5 - 2

12 3 4

中文翻译

下载PDF

与DIMD10A_10相关器件

型号	品牌	获取价格	描述	数据表
DIMD10A-7	DIODES	获取价格	DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT
DIME-036A1-TR	3M	获取价格	SIMM/DIMM SOCKET,36 CONTACTS,2+2
DIME-036A2-TR	3M	获取价格	SIMM/DIMM SOCKET,36 CONTACTS,2+2
DIME-072A	3M	获取价格	36 CONTACT(S), FEMALE, STRAIGHT SINGLE PART CARD EDGE CONN, SOLDER, SOCKET
DIME-072B1-TR	3M	获取价格	Card Edge Connector, 72 Contact(s), 2+2 Row(s), Straight, 0.05 inch Pitch, Solder Terminal
DIMENSION	ETC	获取价格	DiMeNsion 8600 DVD recorder system processor
DIMENSION_F5CP_F6CP	FUJITSU	获取价格	2.5 x 2.0mm package F5CP / F6CP Dimensions & Pin Configuration
DIMM144R1	ADAM-TECH	获取价格	DIMM SOCKET S.O. DIMM SOCKET DDR SOCKET
DIMM144R2	ADAM-TECH	获取价格	DIMM SOCKET S.O. DIMM SOCKET DDR SOCKET
DIMM144R3	ADAM-TECH	获取价格	DIMM SOCKET S.O. DIMM SOCKET DDR SOCKET

与DIMD10A_10相关文章

BSS138LT3G：一款高效能N沟道MOSFET的全面解析
2024-07-04

4
解读EGP10B二极管资料手册：产品特性、参数分析
2024-07-04

4
RT9164AGG手册资料详解：引脚信息、设计指南
2024-07-04

4
2SA1037KPT资料详解：产品特性、电气参数、设计指南
2024-07-04

5

产品中心

服务支持

精选活动

关于我们

帮助中心

DIMD10A_10

DIMD10A_10 数据手册

与DIMD10A_10相关器件

与DIMD10A_10相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

DIMD10A_10

DIMD10A_10 数据手册

与DIMD10A_10相关器件

与DIMD10A_10相关文章

您还可以找

您在本页遇到什么问题？