5秒后页面跳转
DIM800NSM33-F000 PDF预览

DIM800NSM33-F000

更新时间: 2024-09-29 06:53:11
品牌 Logo 应用领域
DYNEX 开关双极性晶体管
页数 文件大小 规格书
8页 275K
描述
Single Switch IGBT Module

DIM800NSM33-F000 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Contact Manufacturer包装说明:FLANGE MOUNT, R-PUFM-X7
针数:7Reach Compliance Code:unknown
风险等级:5.66其他特性:HIGH RELIABILITY
外壳连接:ISOLATED最大集电极电流 (IC):800 A
集电极-发射极最大电压:3300 V配置:COMPLEX
门极-发射极最大电压:20 VJESD-30 代码:R-PUFM-X7
元件数量:2端子数量:7
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):10400 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):2440 ns
标称接通时间 (ton):1515 nsBase Number Matches:1

DIM800NSM33-F000 数据手册

 浏览型号DIM800NSM33-F000的Datasheet PDF文件第2页浏览型号DIM800NSM33-F000的Datasheet PDF文件第3页浏览型号DIM800NSM33-F000的Datasheet PDF文件第4页浏览型号DIM800NSM33-F000的Datasheet PDF文件第5页浏览型号DIM800NSM33-F000的Datasheet PDF文件第6页浏览型号DIM800NSM33-F000的Datasheet PDF文件第7页 
DIM800NSM33-F000  
Single Switch IGBT Module  
PDS5615-4.1 January 2009(LN26570)  
FEATURES  
KEY PARAMETERS  
V
V
CES  
3300V  
2.8V  
800A  
1600A  
Soft Punch Through Silicon  
CE(sat)  
*
(typ)  
(max)  
(max)  
Isolated AlSiC Base with AlN Substrates  
High Thermal Cycling Capability  
10µs Short Circuit Withstand  
Lead Free construction  
I
I
C
C(PK)  
*(measured at the auxiliary terminals)  
APPLICATIONS  
High Reliability Inverters  
Motor Controllers  
Traction Drives  
Choppers  
The Powerline range of high power modules includes  
half bridge, chopper, dual, single and bi-directional  
switch configurations covering voltages from 1200V  
to 6500V and currents up to 3600A.  
Fig. 1 Circuit configuration  
The DIM800NSM33-F000 is a single switch 3300V,  
soft punch through n-channel enhancement mode,  
insulated gate bipolar transistor (IGBT) module. The  
IGBT has a wide reverse bias safe operating area  
(RBSOA) plus 10us short circuit withstand. This  
device is optimised for traction drives and other  
applications requiring high thermal cycling capability.  
The module incorporates an electrically isolated base  
plate and low inductance construction enabling circuit  
designers to optimise circuit layouts and utilise  
grounded heat sinks for safety.  
ORDERING INFORMATION  
Order As:  
Outline type code: N  
(See Fig. 11 for further information)  
Fig. 2 Package  
DIM800NSM33-F000  
Note: When ordering, please use the complete part  
number  
1/8  

与DIM800NSM33-F000相关器件

型号 品牌 获取价格 描述 数据表
DIM800NSM33-F000_12 DYNEX

获取价格

Single Switch IGBT Module
DIM800XSM33-F000 DYNEX

获取价格

Single Switch IGBT Module
DIM800XSM33-F000_11 DYNEX

获取价格

Single Switch IGBT Module
DIM800XSM45-TS000 DYNEX

获取价格

Single Switch IGBT Module
DIM800XSM45-TS000_15 DYNEX

获取价格

Single Switch IGBT Module
DIM800XSM45-TS001 DYNEX

获取价格

Single Switch IGBT Module
DIM800XSM45-TS001_15 DYNEX

获取价格

Single Switch IGBT Module
DIM900ESM45-F000 DYNEX

获取价格

Insulated Gate Bipolar Transistor, 900A I(C), 4500V V(BR)CES, N-Channel, LEAD FREE, MODULE
DIMD10A DIODES

获取价格

DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT
DIMD10A_10 DIODES

获取价格

DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT