Datasheet > DIM800XSM45-TS001

DIM800XSM45-TS001

更新时间： 2024-01-26 23:26:43

品牌	Logo	应用领域
DYNEX		双极性晶体管
页数	文件大小	规格书
8页	403K
描述
Single Switch IGBT Module

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数据手册

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DIM800XSM45-TS001 数据手册

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Data

DIM800XSM45-TS001

Single Switch IGBT Module

Replaces DS6090-5

DS6090-6 August 2014 (LN31875)

FEATURES

KEY PARAMETERS



10.2kV Isolation

V_CES

V_CE(sat)* (typ)

I_C

I_C(PK)

4500V

2.7V

800A

1600A

10µs Short Circuit Withstand

(max)

High Thermal Cycling Capability

High Current Density Enhanced DMOS SPT

Isolated AlSiC Base With AlN Substrates

* Measured at the auxiliary terminals

7(C)

5(C)

APPLICATIONS

3(C)



High Reliability Inverters

Motor Controllers

Traction Drives

Choppers

2(G)

The Powerline range of high power modules includes

half bridge, chopper, dual, single and bi-directional

switch configurations covering voltages from 1200V to

6500V and currents up to 2400A.

1(E)

6(E)

4(E)

The DIM800XSM45-TS001 is a single switch 4500V,

n-channel enhancement mode, insulated gate bipolar

transistor (IGBT) module. The IGBT has a wide

reverse bias safe operating area (RBSOA) plus 10μs

short circuit withstand. This device is optimised for

traction drives and other applications requiring high

thermal cycling capability.

Fig. 1 Circuit configuration

The module incorporates an electrically isolated base

plate and low inductance construction enabling circuit

designers to optimise circuit layouts and utilise

grounded heat sinks for safety.

ORDERING INFORMATION

Order As:

DIM800XSM45-TS001

Outline type code: X

Note: When ordering, please use the complete part

number

(See Fig. 11 for further information)

Fig. 2 Package

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures

1/8

www.dynexsemi.com

12 3 4 5 6 7 8

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