Datasheet > DIM800NSM33-A

DIM800NSM33-A

更新时间： 2024-01-12 10:42:48

品牌	Logo	应用领域
其他 - ETC		开关双极性晶体管
页数	文件大小	规格书
10页	185K
描述
IGBT Modules - Single Switch

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中文翻译

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数据手册

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DIM800NSM33-A 数据手册

DIM800NSM33-A000

Single Switch IGBT Module

Replaces June 2002, version DS5486-4.1

DS5486-5.0 February 2003

FEATURES

KEY PARAMETERS

I 10µs Short Circuit Withstand

I High Thermal Cycling Capability

I Non Punch Through Silicon

I Isolated MMC Base with AlN Substrates

V_CES

V_CE(sat)

I_C

3300V

3.2V

800A

1600A

(typ)

(max)

I_C(PK)

*(measured at the power busbars and not the auxiliary terminals)

External connection

APPLICATIONS

I High Reliability Inverters

I Motor Controllers

I Traction Drives

Aux C

I Choppers

The Powerline range of high power modules includes half

bridge, chopper, dual and single switch configurations covering

voltages from 600V to 3300V and currents up to 2400A.

Aux E

External connection

The DIM800NSM33-A000 is a single switch 3300V, n

channel enhancement mode, insulated gate bipolar transistor

(IGBT) module. The IGBT has a wide reverse bias safe

operating area (RBSOA) plus full 10µs short circuit withstand.

This device is optimised for traction drives and other applications

requiring high thermal cycling capability.

Fig. 1 Single switch circuit diagram

C¹

The module incorporates an electrically isolated base plate

and low inductance construction enabling circuit designers to

optimise circuit layouts and utilise grounded heat sinks for safety.

E²

ORDERING INFORMATION

Order As:

DIM800NSM33-A000

Note: When ordering, please use the whole part number.

²- Aux Emitter

¹- Aux Collector

Outline type code: N

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

1/10

www.dynexsemi.com

12 3 4 5 6 7...10

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