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DIM800NSM33-F PDF预览

DIM800NSM33-F

更新时间: 2024-01-20 15:18:29
品牌 Logo 应用领域
其他 - ETC 开关双极性晶体管
页数 文件大小 规格书
9页 159K
描述
IGBT Modules - Single Switch

DIM800NSM33-F 数据手册

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DIM800NSM33-F000  
Single Switch IGBT Module  
PDS5615-1.1 June 2003  
FEATURES  
KEY PARAMETERS  
I Soft Punch Through Silicon  
I 10µs Short Circuit Withstand  
I Isolated MMC Base with AlN Substrates  
I High Thermal Cycling Capability  
VCES  
VCE(sat)  
IC  
3300V  
3.0V  
800A  
1600A  
*
(typ)  
(max)  
(max)  
IC(PK)  
*(measured at the auxiliary terminals)  
External connection  
C1 C2  
APPLICATIONS  
I High Reliability Inverters  
I Motor Controllers  
I Traction Drives  
Aux C  
I Choppers  
G
The Powerline range of high power modules includes half  
bridge, chopper, bi-directional, dual and single switch  
configurations covering voltages from 600V to 3300V and  
currents up to 3600A.  
Aux E  
E1  
E2  
External connection  
The DIM800NSM33-F000 is a single switch 3300V, soft  
punch through, n channel enhancement mode, insulated gate  
bipolar transistor (IGBT) module. The IGBT has a wide reverse  
bias safe operating area (RBSOA) plus full 10µs short circuit  
withstand. This device is optimised for traction drives and other  
applications requiring high thermal cycling capability.  
Fig. 1 Single switch circuit diagram  
C1  
C1  
E1  
The module incorporates an electrically isolated base plate  
and low inductance construction enabling circuit designers to  
optimise circuit layouts and utilise grounded heat sinks for safety.  
E2  
G
E2  
C2  
ORDERING INFORMATION  
Order As:  
DIM800NSM33-F000  
E
C
2 - Aux Emitter  
1 - Aux Collector  
Note: When ordering, please use the whole part number.  
Outline type code: N  
(See package details for further information)  
Fig. 2 Electrical connections - (not to scale)  
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.  
1/9  
www.dynexsemi.com  

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