Datasheet > DIM800DCM17-A

DIM800DCM17-A

更新时间： 2024-09-26 23:47:03

品牌	Logo	应用领域
其他 - ETC		双极性晶体管
页数	文件大小	规格书
10页	195K
描述
IGBT Modules - Chopper

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中文翻译

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数据手册

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DIM800DCM17-A 数据手册

DIM800DCM17-A000

IGBT Chopper Module

Replaces issue March 2002, version DS5444-3.0

DS5444-4.1 July 2002

FEATURES

KEY PARAMETERS

V_CES

V_CE(sat)

I_C

1700V

2.7V

800A

1600A

■ 10µs Short Circuit Withstand

■ High Thermal Cycling Capability

■ Non Punch Through Silicon

■ Isolated MMC Base with AlN Substrates

(typ)

(max)

I_C(PK)

*(measured at the power busbars and not the auxiliary terminals)

APPLICATIONS

■ Choppers

1(E1)

2(C2)

5(E¹)

6(G¹)

■ Motor Controllers

■ Traction Drives

The Powerline range of high power modules includes half

bridge, chopper, dual, single and bi-directional switch

configurations covering voltages from 600V to 3300V and

currents up to 2400A.

7(C¹)

3(C1)

4(E2)

The DIM800DCM17-A000 is a 1700V, n channel

enhancement mode insulated gate bipolar transistor (IGBT)

chopper module. The IGBT has a wide reverse bias safe

operating area (RBSOA) plus full 10µs short circuit withstand.

This module is optimised for traction drives and other

applications requiring high thermal cycling capability.

Fig. 1 Chopper circuit diagram

The module incorporates an electrically isolated base plate

and low inductance construction enabling circuit designers to

optimise circuit layouts and utilise grounded heat sinks for safety.

ORDERING INFORMATION

Order As:

DIM800DCM17-A000

Note: When ordering, please use the whole part number.

Outline type code: D

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

1/10

www.dynexsemi.com

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