Datasheet > DIM800DDM17-E

DIM800DDM17-E

更新时间： 2024-09-26 23:47:03

品牌	Logo	应用领域
其他 - ETC		开关双极性晶体管
页数	文件大小	规格书
9页	156K
描述
IGBT Modules - Dual Switch

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DIM800DDM17-E 数据手册

DIM800DDM17-E000

Dual Switch IGBT Module

PDS5619-1.2 June 2003

FEATURES

KEY PARAMETERS

V_CES

V_CE(sat)

I_C

1700V

2.0V

800A

1600A

I Trench Gate Field Stop Technology

I Low Conduction Losses

(typ)

(max)

I_C(PK)

I Low Switching Losses

*Measured at auxiliary terminals.

I 10µs Short Circuit Withstand

I Isolated MMC Base with AlN Substrates

I High Thermal Cycling Capability

1(E1)

2(C2)

12(C²)

5(E¹)

APPLICATIONS

I High Reliability Inverters

G Wind Turbines

G Motor Controllers

G UPS Systems

I Traction

6(G¹)

11(G²)

10(E²)

7(C¹)

3(C1)

4(E2)

G Propulsion Drives

G Auxiliaries

Fig. 1 Dual switch circuit diagram

The Powerline range of high power modules includes half

bridge, chopper, dual, single and bi-directional switch

configurations covering voltages from 600V to 3300V and

currents up to 3600A.

The DIM800DDM17-E000 is a dual switch 1700V, n channel

enhancement mode, insulated gate bipolar transistor (IGBT)

module. The IGBT has a wide reverse bias safe operating area

(RBSOA) plus full 10µs short circuit withstand. This module is

optimised for applications requiring high thermal cycling

capability.

The module incorporates an electrically isolated base plate

and low inductance construction enabling circuit designers to

optimise circuit layouts and utilise grounded heat sinks for safety.

ORDERING INFORMATION

Order As:

DIM800DDM17-E000

Outline type code: D

Note: When ordering, please use the complete part number.

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

1/9

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