Datasheet > DIM600DDM17-A000_10

DIM600DDM17-A000_10

更新时间： 2024-09-27 12:51:43

品牌	Logo	应用领域
DYNEX		开关双极性晶体管
页数	文件大小	规格书
8页	317K
描述
Dual Switch IGBT Module

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数据手册

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DIM600DDM17-A000

Dual Switch IGBT Module

Replaces DS5596-1.2

DS5596-2 September 2010 (LN26750)

FEATURES

KEY PARAMETERS



10µs Short Circuit Withstand

High Thermal Cycling Capability

Non Punch Through Silicon

V_CES

V_CE(sat)* (typ)

I_C

I_C(PK)

1700V

2.7 V

600A

(max)

1200A

Isolated AlSiC Base with AlN Substrates

Lead Free construction

* Measured at the power busbars, not the auxiliary terminals

2(C)

1(E)

APPLICATIONS

5(E)

6(G)

12(C)

11(G)



High Reliability Inverters

Motor Controllers

Traction Drives

The Powerline range of high power modules includes

half bridge, chopper, dual, single and bi-directional

switch configurations covering voltages from 1200V to

6500V and currents up to 2400A.

10(E)

7(C)

3(C)

4(E)

The DIM600DDM17-A000 is a dual switch 1700V, n-

channel enhancement mode, insulated gate bipolar

transistor (IGBT) module. The IGBT has a wide

reverse bias safe operating area (RBSOA) plus 10μs

short circuit withstand. This device is optimised for

traction drives and other applications requiring high

thermal cycling capability.

Fig. 1 Circuit configuration

The module incorporates an electrically isolated base

plate and low inductance construction enabling circuit

designers to optimise circuit layouts and utilise

grounded heat sinks for safety.

ORDERING INFORMATION

Order As:

DIM600DDM17-A000

Note: When ordering, please use the complete part

number

Outline type code: D

(See Fig. 11 for further information)

Fig. 2 Package

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures

1/8

www.dynexsemi.com

12 3 4 5 6 7 8

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