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DIM600DDM12-E000 PDF预览

DIM600DDM12-E000

更新时间: 2024-01-19 20:34:41
品牌 Logo 应用领域
DYNEX 局域网电动机控制晶体管
页数 文件大小 规格书
9页 136K
描述
Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, PLASTIC, D, 12 PIN

DIM600DDM12-E000 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Contact Manufacturer包装说明:FLANGE MOUNT, R-PUFM-X12
针数:12Reach Compliance Code:unknown
风险等级:5.73其他特性:HIGH RELIABILITY
外壳连接:ISOLATED最大集电极电流 (IC):600 A
集电极-发射极最大电压:1200 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 代码:R-PUFM-X12元件数量:2
端子数量:12封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):1020 ns
标称接通时间 (ton):750 nsBase Number Matches:1

DIM600DDM12-E000 数据手册

 浏览型号DIM600DDM12-E000的Datasheet PDF文件第2页浏览型号DIM600DDM12-E000的Datasheet PDF文件第3页浏览型号DIM600DDM12-E000的Datasheet PDF文件第4页浏览型号DIM600DDM12-E000的Datasheet PDF文件第5页浏览型号DIM600DDM12-E000的Datasheet PDF文件第6页浏览型号DIM600DDM12-E000的Datasheet PDF文件第7页 
DIM600DDM12-E000  
Dual Switch IGBT Module  
PDS5745-1.2 March 2004  
FEATURES  
KEY PARAMETERS  
VCES  
VCE(sat)  
IC  
1200V  
1.7V  
600A  
1200A  
I Trench Gate Field Stop Technology  
I Low Conduction Losses  
*
(typ)  
(max)  
(max)  
IC(PK)  
I Low Switching Losses  
*Measured at auxiliary terminals.  
I 10µs Short Circuit Withstand  
I Isolated MMC Base with AlN Substrates  
I High Thermal Cycling Capability  
1(E1)  
2(C2)  
12(C2)  
5(E1)  
APPLICATIONS  
I High Reliability Inverters  
G Wind Turbines  
G Motor Controllers  
G UPS Systems  
I Traction  
6(G1)  
11(G2)  
10(E2)  
7(C1)  
3(C1)  
4(E2)  
G Propulsion Drives  
G Auxiliaries  
Fig. 1 Dual switch circuit diagram  
The Powerline range of high power modules includes half  
bridge, chopper, dual, single and bi-directional switch  
configurations covering voltages from 600V to 3300V and  
currents up to 3600A.  
The DIM600DDM12-E000 is a dual switch 1200V, n channel  
enhancement mode, insulated gate bipolar transistor (IGBT)  
module. The IGBT has a wide reverse bias safe operating area  
(RBSOA) plus full 10µs short circuit withstand. This module is  
optimised for applications requiring high thermal cycling  
capability.  
The module incorporates an electrically isolated base plate  
and low inductance construction enabling circuit designers to  
optimise circuit layouts and utilise grounded heat sinks for safety.  
ORDERING INFORMATION  
Order As:  
DIM600DDM12-E000  
Outline type code: D  
Note: When ordering, please use the complete part number.  
(See package details for further information)  
Fig. 2 Module Outline  
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.  
1/9  
www.dynexsemi.com  

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