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DHG20C1200PB PDF预览

DHG20C1200PB

更新时间: 2024-11-05 12:54:27
品牌 Logo 应用领域
IXYS 二极管快恢复二极管局域网软恢复二极管快速软恢复二极管
页数 文件大小 规格书
4页 163K
描述
Sonic Fast Recovery Diode

DHG20C1200PB 技术参数

是否无铅: 不含铅生命周期:Transferred
零件包装代码:TO-220AB包装说明:R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:4.31其他特性:FREEWHEELING, SNUBBER DIODE
应用:FAST SOFT RECOVERY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):2.38 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:70 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:70 W
认证状态:Not Qualified最大重复峰值反向电压:1200 V
最大反向恢复时间:0.075 µs子类别:Rectifier Diodes
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DHG20C1200PB 数据手册

 浏览型号DHG20C1200PB的Datasheet PDF文件第2页浏览型号DHG20C1200PB的Datasheet PDF文件第3页浏览型号DHG20C1200PB的Datasheet PDF文件第4页 
DHG 20 C 1200 PB  
preliminary  
VRRM = 1200 V  
Sonic Fast Recovery Diode  
IFAV = 2x  
A
10  
High Performance Fast Recovery Diode  
Low Loss and Soft Recovery  
Common Cathode  
trr  
=
200 ns  
Part number  
1
2
3
DHG 20 C 1200 PB  
Backside: cathode  
Features / Advantages:  
Applications:  
Package:  
Planar passivated chips  
Antiparallel diode for high frequency  
switching devices  
Antisaturation diode  
Snubber diode  
Free wheeling diode  
Housing: TO-220  
Very low leakage current  
Very short recovery time  
Improved thermal behaviour  
Very low Irm-values  
rIndustry standard outline  
rEpoxy meets UL 94V-0  
rRoHS compliant  
Very soft recovery behaviour  
Avalanche voltage rated for reliable  
operation  
Rectifiers in switch mode power  
supplies (SMPS)  
Uninterruptible power supplies (UPS)  
Soft reverse recovery for low EMI/RFI  
Low Irm reduces:  
- Power dissipation within the diode  
- Turn-on loss in the commutating switch  
R a t i n g s  
Conditions  
Symbol  
VRRM  
IR  
Definition  
min. typ. max. Unit  
TVJ  
1200  
10  
V
max. repetitive reverse voltage  
reverse current  
=
=
25°C  
25°C  
µA  
VR = 1200V  
VR = 1200V  
TVJ  
TVJ = 125°C  
TVJ 25°C  
0.2 mA  
forward voltage  
VF  
IF  
IF  
IF  
IF  
=
=
=
=
10A  
20A  
10A  
20A  
=
2.22  
V
V
V
V
A
V
2.93  
2.23  
3.14  
10  
T
VJ = 125°C  
IFAV  
VF0  
rF  
TC = 105°C  
TVJ = 150°C  
average forward current  
threshold voltage  
rectangular  
d = 0.5  
1.23  
for power loss calculation only  
slope resistance  
90 m  
RthJC  
TVJ  
Ptot  
IFSM  
IRM  
1.50 K/W  
thermal resistance junction to case  
virtual junction temperature  
total power dissipation  
-55  
150  
85  
°C  
W
A
TC  
=
=
25°C  
45°C  
max. forward surge current  
max. reverse recovery current  
TVJ  
60  
t = 10 ms (50 Hz), sine  
9
10.5  
200  
350  
4
A
TVJ = 25°C  
TVJ = 125°C  
TVJ = 25°C  
TVJ = 125°C  
A
IF = 10 A; VR = 600V  
-diF/dt = 250 A/µs  
reverse recovery time  
junction capacitance  
trr  
ns  
ns  
pF  
CJ  
VR = 600 V; f = 1 MHz  
TVJ = 25°C  
IXYS reserves the right to change limits, conditions and dimensions.  
20110715a  
Data according to IEC 60747and per diode unless otherwise specified  
2011 IXYS all rights reserved  
©

DHG20C1200PB 替代型号

型号 品牌 替代类型 描述 数据表
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