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D2021UK PDF预览

D2021UK

更新时间: 2024-09-14 22:33:59
品牌 Logo 应用领域
SEME-LAB 晶体晶体管射频放大器
页数 文件大小 规格书
2页 18K
描述
METAL GATE RF SILICON FET

D2021UK 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT
包装说明:SMALL OUTLINE, R-XDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.11Is Samacsys:N
其他特性:LOW NOISE配置:SINGLE
最小漏源击穿电压:65 VFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-XDSO-G8
JESD-609代码:e4元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:200 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:GOLD端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

D2021UK 数据手册

 浏览型号D2021UK的Datasheet PDF文件第2页 
TetraFET  
D2021UK  
METAL GATE RF SILICON FET  
MECHANICAL DATA  
GOLD METALLISED  
MULTI-PURPOSE SILICON  
DMOS RF FET  
A
N
8
1
2
3
4
D
7
6
5
C
B
P
7.5W – 28V – 1GHz  
SINGLE ENDED  
H
K
FEATURES  
M
L
J
E
F
• SIMPLIFIED AMPLIFIER DESIGN  
• SUITABLE FOR BROAD BAND APPLICATIONS  
G
SO8 PACKAGE  
• VERY LOW C  
PIN 1 – SOURCE  
PIN 2 – DRAIN  
PIN 3 – DRAIN  
PIN 4 – SOURCE  
PIN 5 – SOURCE  
PIN 6 – GATE  
rss  
• SIMPLE BIAS CIRCUITS  
• LOW NOISE  
PIN 7 – GATE  
PIN 8 – SOURCE  
Dim.  
A
B
C
D
E
F
G
mm  
4.06  
5.08  
1.27  
0.51  
3.56  
4.06  
1.65  
Tol.  
Inches  
0.160  
0.200  
0.050  
0.020  
0.140  
0.160  
0.065  
Tol.  
• HIGH GAIN – 10 dB MINIMUM  
±0.08  
±0.08  
±0.08  
±0.08  
±0.08  
±0.08  
±0.08  
+0.25  
-0.00  
Min.  
Max.  
Max.  
Min.  
Max.  
±0.08  
Max.  
±0.08  
±0.003  
±0.003  
±0.003  
±0.003  
±0.003  
±0.003  
±0.003  
+0.010  
-0.000  
Min.  
Max.  
Max.  
Min.  
Max.  
±0.003  
Max.  
±0.003  
APPLICATIONS  
HF/VHF/UHF COMMUNICATIONS  
from 1 MHz to 1 GHz  
H
0.76  
0.030  
0.51  
1.02  
45°  
0°  
0.020  
0.040  
45°  
0°  
7°  
0.008  
0.086  
0.180  
J
K
L
7°  
M
N
P
0.20  
2.18  
4.57  
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C unless otherwise stated)  
17.5W  
case  
P
Power Dissipation  
D
BV  
BV  
Drain – Source Breakdown Voltage  
Gate – Source Breakdown Voltage  
Drain Current  
65V  
±20V  
DSS  
GSS  
I
3A  
D(sat)  
T
T
Storage Temperature  
–65 to 150°C  
200°C  
stg  
Maximum Operating Junction Temperature  
j
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.  
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk  
Prelim. 2/99  

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