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D2025UK PDF预览

D2025UK

更新时间: 2024-11-29 21:54:31
品牌 Logo 应用领域
SEME-LAB 射频
页数 文件大小 规格书
2页 19K
描述
METAL GATE RF SILICON FET

D2025UK 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:DISK BUTTON, O-CRDB-F4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5
其他特性:LOW NOISE最小漏源击穿电压:65 V
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:O-CRDB-F4端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:RADIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

D2025UK 数据手册

 浏览型号D2025UK的Datasheet PDF文件第2页 
TetraFET  
D2025UK  
METAL GATE RF SILICON FET  
MECHANICAL DATA  
GOLD METALLISED  
MULTI-PURPOSE SILICON  
DMOS RF FET  
C
1
4
2
3
2.5W – 28V – 400MHz  
SINGLE ENDED  
FEATURES  
D
• SIMPLIFIED AMPLIFIER DESIGN  
• SUITABLE FOR BROAD BAND APPLICATIONS  
DW  
• LOW C  
rss  
PIN 1  
PIN 3  
DRAIN  
GATE  
PIN 2  
PIN 4  
SOURCE  
SOURCE  
• SIMPLE BIAS CIRCUITS  
• LOW NOISE  
• HIGH GAIN – 13 dB MINIMUM  
DIM  
A
B
mm  
26.16  
5.72  
45°  
Tol.  
Inches  
Tol.  
0.015  
0.005  
5°  
0.38  
0.13  
5°  
1.030  
0.225  
45°  
C
D
E
F
G
H
7.11  
0.13  
1.52  
0.43  
7.67  
0.13  
0.03  
0.13  
0.20  
REF  
0.280  
0.005  
0.055  
0.060  
0.120  
0.005  
0.001  
0.005  
0.008  
REF  
APPLICATIONS  
VHF/UHF COMMUNICATIONS  
from DC to 1GHz  
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C unless otherwise stated)  
case  
P
Power Dissipation  
17.5W  
65V  
D
BV  
BV  
Drain – Source Breakdown Voltage  
Gate – Source Breakdown Voltage  
Drain Current  
DSS  
GSS  
±20V  
I
1A  
D(sat)  
T
T
Storage Temperature  
–65 to 150°C  
200°C  
stg  
Maximum Operating Junction Temperature  
j
Document Number 5855  
Issue 1  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  

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