生命周期: | Obsolete | 包装说明: | ROHS COMPLIANT PACKAGE-8 |
针数: | 8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.82 | 最大集电极电流 (IC): | 0.6 A |
集电极-发射极最大电压: | 160 V | 配置: | SEPARATE, 2 ELEMENTS |
最小直流电流增益 (hFE): | 80 | JESD-30 代码: | R-PDSO-G8 |
元件数量: | 2 | 端子数量: | 8 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 2 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CYT5551DLEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy | |
CYT5551DTR | CENTRAL |
获取价格 |
Power Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy | |
CYT5551DTR13 | CENTRAL |
获取价格 |
Transistor | |
CYT5551DTRPBFREE | CENTRAL |
获取价格 |
Transistor, | |
CYT5551HCD | CENTRAL |
获取价格 |
SURFACE MOUNT DUAL, ISOLATED NPN HIGH CURRENT SILICON TRANSISTORS | |
CYT5551HCDBK | CENTRAL |
获取价格 |
Power Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, | |
CYT5551HCDBKLEADFREE | CENTRAL |
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Transistor | |
CYT5551HCDBKPBFREE | CENTRAL |
获取价格 |
Transistor, | |
CYT5551HCDLEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, | |
CYT5551HCDTR | CENTRAL |
获取价格 |
暂无描述 |