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CYT5551DBK PDF预览

CYT5551DBK

更新时间: 2024-11-06 20:56:23
品牌 Logo 应用领域
CENTRAL 放大器光电二极管晶体管
页数 文件大小 规格书
2页 307K
描述
Power Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, ROHS COMPLIANT PACKAGE-8

CYT5551DBK 技术参数

生命周期:Obsolete包装说明:ROHS COMPLIANT PACKAGE-8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.82最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:160 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):80JESD-30 代码:R-PDSO-G8
元件数量:2端子数量:8
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN最大功率耗散 (Abs):2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

CYT5551DBK 数据手册

 浏览型号CYT5551DBK的Datasheet PDF文件第2页 
PRODUannou  
C
ncem  
T
ent  
New SOT-228 Surface Mount Dual Transistors  
8
1
7
2
6
3
5
4
8
1
7
2
6
3
5
CYTA44D  
CYTA4494D  
CYT5551D  
CYT5551HCD  
4
Dual, Isolated  
Complementary Transistors  
Dual, Isolated NPN Transistors  
features  
Dual Transistors in the new SOT-228 eight (8) lead  
SMD package  
Sample Devices  
available  
High Voltage and High Current Devices  
Utilizes 50% less board space than two SOT-223  
devices  
upon request.  
description  
The CYTA44D, CYTA4494D, CYT5551D, and  
CYT5551HCD types are dual transistors packaged in  
the new SOT-228 eight (8) lead SMD case. These  
devices provide space saving over standard devices in  
the SOT-223. Ideal for high voltage amplifier  
applications.  
selection guide  
BV  
*BV  
CES  
(V)  
MIN  
V
@
I
f
T
CONFIGURATION  
BV  
CBO  
BV  
EBO  
I
@
@
V
V
(V)  
C
ob  
Case  
Type  
CEO  
CE(SAT)  
C
TYPE NO.  
h
@ V  
CE  
@ I  
C
CBO  
CEV  
CB  
CE  
FE  
*
I
(V)  
(mA)  
(V)  
MIN  
(V)  
MIN  
(nA)  
MAX  
(pF)  
MAX  
(V)  
MAX  
(mA)  
(MHz)  
MIN  
MIN  
MAX  
Dual, High Voltage NPN Transistors  
8
7
6
5
Dual, Isolated  
NPN Transistor  
CYTA44D  
SOT-228  
SOT-228  
450  
400  
6.0  
100  
400  
50  
200  
10  
10  
10  
7.0  
7.0  
20  
20  
0.40  
0.40  
1.0  
1
2
3
4
Dual, High Voltage Complementary NPN/PNP Transistors  
8
7
6
5
Dual, Isolated  
Complementary  
NPN & PNP  
Transistor  
CYTA4494D  
450  
400  
160  
6.0  
6.0  
100  
350  
50  
200  
10  
1.0  
1
2
3
4
Dual, High Voltage NPN Transistors  
8
7
6
5
Dual, Isolated  
NPN Transistor  
CYT5551D  
SOT-228  
SOT-228  
180  
50  
120  
120  
80  
80  
250  
250  
5.0  
5.0  
10  
10  
15  
15  
100  
100  
0.20  
0.20  
50  
50  
1
2
3
4
Dual, High Current, High Voltage NPN Transistors  
8
7
6
5
Dual, Isolated  
NPN Transistor  
CYT5551HCD  
180  
160  
6.0  
50  
1
2
3
4
145 Adams Avenue Hauppauge New York 11788 USA Tel:(631) 435-1110 Fax:(631) 435-1824  
www.centralsemi.com  

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