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CYT5551DTR PDF预览

CYT5551DTR

更新时间: 2024-11-06 06:47:51
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 541K
描述
Power Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, ROHS COMPLIANT PACKAGE-8

CYT5551DTR 数据手册

 浏览型号CYT5551DTR的Datasheet PDF文件第2页 
CYT5551D  
www.centralsemi.com  
SURFACE MOUNT  
DUAL, ISOLATED  
NPN SILICON TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CYT5551D type  
consists of two (2) isolated NPN silicon transistors  
packaged in an epoxy molded SOT-228 surface mount  
case. Manufactured by the epitaxial planar process,  
this SUPERmini™ device is ideal for high voltage  
amplifier applications.  
MARKING: FULL PART NUMBER  
SOT-228 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
V
V
V
180  
160  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
6.0  
V
Continuous Collector Current  
Power Dissipation  
I
600  
mA  
W
C
P
2.0  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T
T
-65 to +150  
62.5  
°C  
J, stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
50  
UNITS  
nA  
μA  
nA  
V
I
I
I
V
V
V
=120V  
CBO  
CBO  
EBO  
CB  
CB  
BE  
=120V, T =100ºC  
50  
A
=4.0V  
50  
BV  
BV  
BV  
I =100μA  
180  
160  
6.0  
CBO  
CEO  
C
I =1.0mA  
V
C
I =10μA  
V
EBO  
E
V
V
V
V
I =10mA, I =1.0mA  
0.15  
0.20  
1.00  
1.00  
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
C
B
I =50mA, I =5.0mA  
V
C
B
I =10mA, I =1.0mA  
V
C
B
I =50mA, I =5.0mA  
V
C
B
h
h
h
V
=5.0V, I =1.0mA  
80  
80  
CE  
CE  
CE  
CE  
CB  
EB  
CE  
CE  
C
V
V
V
V
V
V
V
=5.0V, I =10mA  
250  
FE  
C
=5.0V, I =50mA  
30  
FE  
C
f
=10V, I =10mA, f=100MHz  
100  
300  
6.0  
20  
MHz  
pF  
T
C
C
=10V, I =0, f=1.0MHz  
ob  
ib  
E
C
=0.5V, I =0, f=1.0MHz  
pF  
C
h
=10V, I =1.0mA, f=1.0kHz  
50  
200  
fe  
C
NF  
=5.0V, I =200μA, R =10Ω,  
C S  
f=10Hz to 15.7kHz  
8.0  
dB  
R2 (23-February 2010)  

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