Datasheet > CYT5551DTR

CYT5551DTR

更新时间： 2024-11-25 06:47:51

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	541K
描述
Power Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, ROHS COMPLIANT PACKAGE-8

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CYT5551DTR 数据手册

CYT5551D

www.centralsemi.com

SURFACE MOUNT

DUAL, ISOLATED

NPN SILICON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CYT5551D type

consists of two (2) isolated NPN silicon transistors

packaged in an epoxy molded SOT-228 surface mount

case. Manufactured by the epitaxial planar process,

this SUPERmini™ device is ideal for high voltage

amplifier applications.

MARKING: FULL PART NUMBER

SOT-228 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

180

160

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

6.0

Continuous Collector Current

Power Dissipation

600

2.0

Operating and Storage Junction Temperature

Thermal Resistance

-65 to +150

62.5

°C

J, stg

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

μA

=120V

CBO

EBO

=120V, T =100ºC

=4.0V

I =100μA

180

160

6.0

CBO

CEO

I =1.0mA

I =10μA

EBO

I =10mA, I =1.0mA

0.15

0.20

1.00

CE(SAT)

BE(SAT)

I =50mA, I =5.0mA

I =10mA, I =1.0mA

I =50mA, I =5.0mA

=5.0V, I =1.0mA

=5.0V, I =10mA

250

=5.0V, I =50mA

=10V, I =10mA, f=100MHz

100

300

6.0

MHz

=10V, I =0, f=1.0MHz

=0.5V, I =0, f=1.0MHz

=10V, I =1.0mA, f=1.0kHz

200

=5.0V, I =200μA, R =10Ω,

C S

f=10Hz to 15.7kHz

8.0

R2 (23-February 2010)

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