Datasheet > CYT5551HCDTR13

CYT5551HCDTR13

更新时间： 2024-09-16 14:48:47

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	103K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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CYT5551HCDTR13 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.84
Is Samacsys：	N	最大集电极电流 (IC)：	1 A
最小直流电流增益 (hFE)：	30	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	2 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	100 MHz	Base Number Matches：	1

CYT5551HCDTR13 数据手册

Central

CYT5551HCD

Semiconductor Corp.

SURFACE MOUNT

DUAL, ISOLATED NPN HIGH CURRENT

SILICON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CYT5551HCD

type consists of two (2) isolated NPN high current

silicon transistors packaged in an epoxy molded

SOT-228 surface mount case. Manufactured by the

epitaxial planar process, this SUPERmini™ device

is ideal for high current applications.

MARKING CODE: FULL PART NUMBER

SOT-228 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

180

160

6.0

1.0

2.0

CBO

CEO

EBO

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

T ,T

-65 to +150

62.5

°C

stg

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

µA

=120V

CBO

=120V, T =100ºC

=4.0V

CBO

EBO

I =100µA

180

160

6.0

CBO

I =1.0mA

CEO

I =10µA

EBO

I =10mA, I =1.0mA

0.15

0.20

1.00

CE(SAT)

I =50mA, I =5.0mA

CE(SAT)

I =10mA, I =1.0mA

BE(SAT)

I =50mA, I =5.0mA

BE(SAT)

=5.0V, I =1.0mA

=5.0V, I =10mA

250

=5.0V, I =50mA

=10V, I =1.0A

=10V, I =10mA, f=100MHz

100

MHz

=10V, I =0, f=1.0MHz

R0 (15-March 2005)

中文翻译

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