Datasheet > 晶体管 > 其他晶体管> CYT5551HCDBKPBFREE

CYT5551HCDBKPBFREE

更新时间： 2024-11-20 13:07:15

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	104K
描述
Transistor,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

CYT5551HCDBKPBFREE 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.61
Is Samacsys：	N	最大集电极电流 (IC)：	1 A
最小直流电流增益 (hFE)：	80	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	2 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	100 MHz	Base Number Matches：	1

CYT5551HCDBKPBFREE 数据手册

浏览型号CYT5551HCDBKPBFREE的Datasheet PDF文件第2页

Central

CYT5551D

Semiconductor Corp.

SURFACE MOUNT

DUAL, ISOLATED NPN

SILICON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CYT5551D

type consists of two (2) isolated NPN silicon

transistors packaged in an epoxy molded SOT-228

surface mount case. Manufactured by the epitaxial

planar process, this SUPERmini™ device is ideal

for high voltage amplifier applications.

MARKING CODE: FULL PART NUMBER

SOT-228 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

180

160

6.0

CBO

CEO

EBO

600

2.0

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

T ,T

-65 to +150

62.5

°C

stg

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

µA

=120V

CBO

=120V, T =100ºC

=4.0V

CBO

EBO

I =100µA

180

160

6.0

CBO

I =1.0mA

CEO

I =10µA

EBO

I =10mA, I =1.0mA

0.15

0.20

1.00

CE(SAT)

I =50mA, I =5.0mA

CE(SAT)

I =10mA, I =1.0mA

BE(SAT)

I =50mA, I =5.0mA

BE(SAT)

=5.0V, I =1.0mA

=5.0V, I =10mA

250

=5.0V, I =50mA

=10V, I =10mA, f=100MHz

100

300

6.0

MHz

=10V, I =0, f=1.0MHz

=0.5V, I =0, f=1.0MHz

=10V, I =1.0mA, f=1.0kHz

200

=5.0V, I =200µA, RS=10Ω

f=10Hz to 15.7kHz

8.0

R1 (11-August 2005)

中文翻译

下载PDF

与CYT5551HCDBKPBFREE相关器件

型号	品牌	获取价格	描述	数据表
CYT5551HCDLEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy,
CYT5551HCDTR	CENTRAL	获取价格	暂无描述
CYT5551HCDTR13	CENTRAL	获取价格	Transistor
CYT5554D	CENTRAL	获取价格	SURFACE MOUNT DUAL, ISOLATED COMPLEMENTARY HIGH VOLTAGE NPN/PNP SILICON TRANSISTORS
CYT5554DBK	CENTRAL	获取价格	暂无描述
CYT6116	ETC	获取价格
CYT6118	ETC	获取价格
CYT6118AKG	ETC	获取价格	500mA CMOS LDO Regulator
CYT6118BKG	ETC	获取价格	500mA CMOS LDO Regulator
CYT6118CKG	ETC	获取价格	500mA CMOS LDO Regulator